5秒后页面跳转
捷配首页

Datasheet > SST25VF016B-50-4I-QAF
SST25VF016B-50-4I-QAF PDF预览

SST25VF016B-50-4I-QAF

更新时间： 2024-11-19 21:13:31
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器时钟内存集成电路
页数 文件大小 规格书
30页 1100K
描述
16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

阅读下载

中文翻译

获取价格

SST25VF016B-50-4I-QAF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SON
包装说明：HVSON, SOLCC8,.25针数：8
Reach Compliance Code：compliantECCN代码：3A991.B.1.A
HTS代码：8542.32.00.51Factory Lead Time：17 weeks
风险等级：1.98Is Samacsys：N
最大时钟频率 (fCLK)：50 MHz数据保留时间-最小值：100
耐久性：100000 Write/Erase CyclesJESD-30 代码：R-XDSO-N8
JESD-609代码：e4长度：6 mm
内存密度：16777216 bit内存集成电路类型：FLASH
内存宽度：1功能数量：1
端子数量：8字数：16777216 words
字数代码：16000000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：16MX1封装主体材料：UNSPECIFIED
封装代码：HVSON封装等效代码：SOLCC8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
并行/串行：SERIAL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：3/3.3 V编程电压：2.7 V
认证状态：Not Qualified座面最大高度：0.8 mm
串行总线类型：SPI最大待机电流：0.00002 A
子类别：Flash Memories最大压摆率：0.03 mA
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.7 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：NO LEAD
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED类型：NOR TYPE
宽度：5 mm写保护：HARDWARE/SOFTWARE
Base Number Matches：1

SST25VF016B-50-4I-QAF 数据手册

 浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第2页浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第3页浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第4页浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第5页浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第6页浏览型号SST25VF016B-50-4I-QAF的Datasheet PDF文件第7页 
SST25VF016B  
16 Mbit SPI Serial Flash  
Features  
Product Description  
• Single Voltage Read and Write Operations  
- 2.7-3.6V  
The 25 series Serial Flash family features a four-wire,  
SPI-compatible interface that allows for a low pin-count  
package which occupies less board space and ulti-  
mately lowers total system costs. The SST25VF016B  
devices are enhanced with improved operating fre-  
quency and even lower power consumption than the  
original SST25VFxxxA devices. SST25VF016B SPI  
serial flash memories are manufactured with propri-  
etary, high-performance CMOS SuperFlash technol-  
ogy. The split-gate cell design and thick-oxide tunneling  
injector attain better reliability and manufacturability  
compared with alternate approaches.  
• Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
• High Speed Clock Frequency  
- Up to 50 MHz  
• Superior Reliability  
- Endurance: 100,000 Cycles (typical)  
- Greater than 100 years Data Retention  
• Low Power Consumption:  
- Active Read Current: 10 mA (typical)  
- Standby Current: 5 µA (typical)  
SST25VF016B devices significantly improve perfor-  
mance and reliability, while lowering power consump-  
tion. The devices write (Program or Erase) with a single  
power supply of 2.7-3.6V for SST25VF016B. The total  
energy consumed is a function of the applied voltage,  
current, and time of application. Since for any given  
voltage range, the SuperFlash technology uses less  
current to program and has a shorter erase time, the  
total energy consumed during any Erase or Program  
operation is less than alternative flash memory technol-  
ogies.  
• Flexible Erase Capability  
- Uniform 4 KByte sectors  
- Uniform 32 KByte overlay blocks  
- Uniform 64 KByte overlay blocks  
• Fast Erase and Byte-Program:  
- Chip-Erase Time: 35 ms (typical)  
- Sector-/Block-Erase Time: 18 ms (typical)  
- Byte-Program Time: 7 µs (typical)  
• Auto Address Increment (AAI) Programming  
The SST25VF016B device is offered in both 8-lead  
SOIC (200 mils) and 8-contact WSON (6mm x 5mm)  
packages. See Figure 2-1 for pin assignments.  
- Decrease total chip programming time over  
Byte-Program operations  
• End-of-Write Detection  
- Software polling the BUSY bit in Status Register  
- Busy Status readout on SO pin in AAI Mode  
• Hold Pin (HOLD#)  
- Suspends a serial sequence to the memory  
without deselecting the device  
• Write Protection (WP#)  
- Enables/Disables the Lock-Down function of the  
status register  
• Software Write Protection  
- Write protection through Block-Protection bits in  
status register  
• Temperature Range  
- Commercial: 0°C to +70°C  
- Industrial: -40°C to +85°C  
• Packages Available  
- 8-lead SOIC (200 mils)  
- 8-contact WSON (6mm x 5mm)  
• All devices are RoHS compliant  
2015 Microchip Technology Inc.  
DS20005044C-page 1  
1234567...30

中文翻译

下载PDF

SST25VF016B-50-4I-QAF 替代型号

型号 品牌 替代类型 描述 数据表
SST25VF016B-50-4I-QAF-T MICROCHIP

完全替代

 IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-75-4I-QAF MICROCHIP

类似代替

 16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8

与SST25VF016B-50-4I-QAF相关器件

型号 品牌 获取价格 描述 数据表
SST25VF016B-50-4I-QAF-T MICROCHIP

获取价格

 		IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-50-4I-S2AE MICROCHIP

获取价格

 		FLASH 2.7V PROM
SST25VF016B-50-4I-S2AE-T MICROCHIP

获取价格

 		暂无描述
SST25VF016B-50-4I-S2AF MICROCHIP

获取价格

 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-S2AF SST

获取价格

 		16 Mbit SPI Serial Flash
SST25VF016B-50-4I-S2AF-T MICROCHIP

获取价格

 		16 Mbit SPI Serial Flash
SST25VF016B-75-4I-QAF SST

获取价格

 		16 Mbit SPI Serial Flash
SST25VF016B-75-4I-QAF MICROCHIP

获取价格

 		16M X 1 FLASH 2.7V PROM, DSO8, 6 X 5 MM, ROHS COMPLIANT, WSON-8
SST25VF016B-75-4I-QAF-T MICROCHIP

获取价格

 		IC,SERIAL EEPROM,NOR FLASH,2MX8,CMOS,LLCC,8PIN,PLASTIC
SST25VF016B-75-4I-S2AF SST

获取价格

 		16 Mbit SPI Serial Flash

与SST25VF016B-50-4I-QAF相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证