Datasheet > SSS1206H

SSS1206H

更新时间： 2024-11-05 01:25:39

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	1094K
描述
Channel MOSFET

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SSS1206H 数据手册

SSS1206H

120V N-Channel MOSFET

Main Product Characteristics

V_DSS120V

R_DS(on) 4.7mΩ (typ.)

I_D180A

①

MarkingandPin

Assignment

TO-247

SchematicDiagram

Features and Benefits



AdvancedProcessTechnology

Special designed for PWM, load switching and

generalpurposeapplications



Ultralowon-resistancewithlowgatecharge

Fastswitching andreversebodyrecovery

175℃operating temperature

Leadfreeproduct

Description

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

devicefor useinpower switching applicationandawidevarietyof other applications.

Absolute Max Rating

Symbol

Parameter

Max.

180 ①

130 ①

670

Units

I_D@ TC = 25°C

I_D@ TC = 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current ②

Power Dissipation ③

375

W/°C

P_D@TC = 25°C

Linear Derating Factor

2.5

V_DS

Drain-Source Voltage

120

V_GS

Gate-to-Source Voltage

± 20

E_AS

Single Pulse Avalanche Energy @ L=0.3mH

Avalanche Current @ L=0.3mH

Operating Junction and Storage Temperature Range

1148

I_AS

87.5

T_JT_STG

-55 to +175

°C

www.goodark.com

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Rev.1.0

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