Datasheet > SSM6N951L

SSM6N951L

更新时间： 2023-12-20 18:46:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	426K
描述
N-ch x 2 Common-drain MOSFET, 12 V, 8 A, 0.0051 Ω@4.5V, TCSP6A-172101

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SSM6N951L 数据手册

SSM6N951L

6. Electrical Characteristics

6.1. Static Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate-source leakage current

Source-source current (zero-gate voltage)

Source-source breakdown voltage

Gate threshold voltage

IGSS

ISSS

VSS = 0 V, VGS = ±8 V

ꢀ

±1

µA

VSS = 12 V, VGS = 0 V

V(BR)SSS IS = 1 mA, VGS = 0 V

Vth VSS = 10 V, IS = 0.84 mA

ꢀ

(Note 1)

0.35

0.9

4.4

4.6

4.9

5.5

0.7

1.4

5.1

5.5

6.8

1.2

Source–source on-resistance

(Note 2) RSS(ON) IS = 4 A, VGS = 4.5 V

IS = 4 A, VGS = 3.8 V

mΩ

3.2

3.5

3.8

ꢀ

IS = 4 A, VGS = 3.1 V

IS = 4 A, VGS = 2.5 V

Body diode forward voltage

(Note 2) VF(S-S) IF = 4 A, VGS = 0 V

Note 1: Let Vth be the voltage applied between gate and source that causes the source current (IS) to below (0.84 mA

for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be

lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON).

Take this into consideration when using the device.

Note 2: Pulse measurement.

6.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Test Condition

VDD = 6 V, IS = 3.0 A,

VGS = 0 to 4.0 V,

RG = 50 Ω, RL = 2 Ω

Duty ≤ 1 %, VIN: tr, tf < 5 ns

Common source, See Chapter 6.3

Min

Typ.

Max

Unit

Switching time (turn-on delay time)

Switching time (rise time)

td(on)

ꢀ

1.1

1.4

4.5

3.0

ꢀ

µs

Switching time (turn-off delay time)

Switching time (fall time)

td(off)

6.3. Switching Time Test Circuit

Fig. 6.3.1 Switching Time Test Circuit

Fig. 6.3.2 Input Waveform/Output Waveform

6.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 �)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1

Qgs1

Qgd

VDD = 6 V, IS = 4.0 A, VGS = 4.0 V

VDD = 6 V, IS = 4.0 A

ꢀ

Gate-drain charge

Toshiba Electronic Devices & Storage Corporation

2023-10-10

Rev.5.0

1 234 5 6 7 8

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