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SSM3J135TU,LF

更新时间： 2024-11-20 13:14:03

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管场效应晶体管
页数	文件大小	规格书
6页	190K
描述
Small Signal Field-Effect Transistor

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技术参数
数据手册

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SSM3J135TU,LF 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

SSM3J135TU,LF 数据手册

SSM3J135TU

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)

SSM3J135TU

○Power Management Switch Applications

•

1.5 V drive

Unit: mm

Low ON-resistance:RDS(ON) = 260 mΩ (max) (@V

RDS(ON) = 180 mΩ (max) (@V

= -1.5 V)

= -1.8 V)

= -2.5 V)

= -4.5 V)

RDS(ON) = 132 mΩ (max) (@V

RDS(ON) = 103 mΩ (max) (@V

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Drain-Source voltage

Symbol

Rating

-20

Unit

DSS

Gate-Source voltage

± 8

GSS

(Note 1)

(Note 2)

-3.0

-6.0

500

Drain current

Pulse

Power dissipation

t < 1s

1000

150

Channel temperature

°C

1: Gate

2: Source

3: Drain

Storage temperature range

stg

−55 to 150

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

UFM

JEDEC

JEITA

―

TOSHIBA

2-2U1A

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: Mounted on FR4 board.

Weight: 6.6mg (typ.)

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)

Marking

Equivalent Circuit (top view)

JJN

2010-11-24

12 3 4 5 6

中文翻译

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