SSM3310GH,J
P-channel Enhancement-mode Power MOSFET
2.5V low gate drive capability
Simple drive requirement
Fast switching
BVDSS
R DS(ON)
ID
-20V
D
S
150mW
-10A
G
Pb-free; RoHS compliant.
DESCRIPTION
G
The SSM3310GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for use in low voltage battery applications. The through-hole version,
the SSM3310GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
D
S
TO-252 (H)
TO-251 (J)
G
D
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-Source Voltage
Rating
-20
Units
V
VDS
VGS
Gate-Source Voltage
V
± 12
-10
ID @ TC=25°C
ID @ TC=100°C
IDM
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
A
-6.2
-24
A
A
PD @ TC=25°C
Total Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
°C
°C
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
THERMAL DATA
Symbol
Parameter
Value
Unit
°C/W
°C/W
Rthj-c
Rthj-a
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
5
110
2/16/2005 Rev.2.1
www.SiliconStandard.com
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