Datasheet > SSM3310GJ

SSM3310GJ

更新时间： 2024-12-01 06:14:07

品牌	Logo	应用领域
SSC		/
页数	文件大小	规格书
7页	395K
描述
P-channel Enhancement-mode Power MOSFET

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SSM3310GJ 数据手册

SSM3310GH,J

P-channel Enhancement-mode Power MOSFET

2.5V low gate drive capability

Simple drive requirement

Fast switching

BV_DSS

R _DS(ON)

I_D

-20V

150mW

-10A

Pb-free; RoHS compliant.

DESCRIPTION

The SSM3310GH is in a TO-252 package, which is widely used for

commercial and industrial surface mount applications, and is well suited

for use in low voltage battery applications. The through-hole version,

the SSM3310GJ in TO-251, is available for low-footprint vertical

mounting. These devices are manufactured with an advanced process,

providing improved on-resistance and switching performance.

TO-252 (H)

TO-251 (J)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-Source Voltage

Rating

-20

Units

V_DS

V_GS

Gate-Source Voltage

± 12

-10

I_D@ T_C=25°C

I_D@ T_C=100°C

I_DM

Continuous Drain Current

Pulsed Drain Current¹

-6.2

-24

P_D@ T_C=25°C

Total Power Dissipation

Linear Derating Factor

0.2

W/°C

°C

T_STG

T_J

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

THERMAL DATA

Symbol

Parameter

Value

Unit

°C/W

Rthj-c

Rthj-a

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

110

2/16/2005 Rev.2.1

www.SiliconStandard.com

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12 3 4 5 6 7

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