Datasheet > SSM3H137TU

SSM3H137TU

更新时间： 2024-11-21 14:56:23

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
9页	225K
描述
N-ch MOSFET + Active Clamp Zener, 34 V, 2.0 A, 0.24 Ω@10V, SOT-323F(UFM)

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SSM3H137TU 数据手册

SSM3H137TU

MOSFETs Silicon N-Channel MOS

SSM3H137TU

1. Applications

•

Relay Drivers

2. Features

(1) AEC-Q101 (Rev. D) qualified. (Note 1)

(2) 4.0-V gate drive voltage.

(3) Low drain-source on-resistance

: RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A)

RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A)

RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A)

Note 1: For detail information, Please contact to our sales.

3. Packaging and Pin Assignment

1: Gate

2: Source

3: Drain

UFM

Start of commercial production

2016-03

2016-03-25

Rev.1.0

12 3 4 5 6 7...9

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