SQJQ131EL
Vishay Siliconix
www.vishay.com
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® 8 x 8L
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Thin 1.6 mm package
D
• Very low thermal resistance
G
1
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
2
S
S
S
3
S
S
4
G
1
S
Top View
Bottom View
G
PRODUCT SUMMARY
VDS (V)
-30
R
DS(on) (Ω) at VGS = -10 V
0.0014
-280
D
ID (A)
P-Channel MOSFET
Configuration
Package
Single
PowerPAK 8 x 8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
-30
UNIT
Drain-source voltage
Gate-source voltage
VDS
V
VGS
20
T
C = 25 °C
-280
-280
545
Continuous drain current
ID
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current b
IS
A
IDM
IAS
-280
63
Single pulse avalanche current
Single pulse avalanche energy
L = 0.1 mH
EAS
198
mJ
W
T
C = 25 °C
600
Maximum power dissipation
PD
TC = 125 °C
200
Operating junction and storage temperature range
Soldering recommendations (peak temperature) d
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
44
UNIT
Junction-to-ambient
PCB mount c
°C/W
Junction-to-case (drain)
RthJC
0.25
Notes
a. Package limited
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom
side solder interconnection
S21-0235-Rev. A, 15-Mar-2021
Document Number: 77936
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000