Datasheet > SQJQ186E

SQJQ186E

更新时间： 2024-11-06 14:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	212K
描述
Automotive N-Channel 80 V (D-S) 175 °C MOSFET

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SQJQ186E 数据手册

SQJQ186E

Vishay Siliconix

www.vishay.com

Automotive N-Channel 80 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®8 x 8L

• AEC-Q101 qualified

• 100 % R_gand UIS tested

• Thin 1.9 mm height

• Material categorization

for definitions of compliance please see

www.vishay.com/doc?99912

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

0.0023

R_DS(on)(Ω) at V_GS= 10 V

I_D(A)

245

N-Channel MOSFET

Configuration

Package

Single

PowerPAK 8 x 8L

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

245

Continuous drain current

I_D

T_C= 125 °C

141

Continuous source current (diode conduction)

Pulsed drain current ^a

I_S

245

I_DM

I_AS

770

Single pulse avalanche current

Single pulse avalanche energy

L = 0.1 mH

E_AS

168

T_C= 25 °C

357

Maximum power dissipation

P_D

T_C= 125 °C

119

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^c

T_J, T_stg

-55 to +175

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-ambient

PCB mount ^b

°C/W

Junction-to-case (drain)

R_thJC

0.42

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %

b. When mounted on 1" square PCB (FR4 material)

c. See solder profile (www.vishay.com/doc?73257)

S22-0351-Rev. A, 25-Apr-2022

Document Number: 62006

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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