SQJ764ELP
Vishay Siliconix
www.vishay.com
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
PowerPAK® SO-8L Dual BWL
• AEC-Q101 qualified
D1
• 100 % Rg and UIS tested
D2
• Material categorization: for definitions of
compliance please see
1
www.vishay.com/doc?99912
S1
2
G1
3
S2
4
G2
1
D
1
D
2
Top View
Bottom View
PRODUCT SUMMARY
VDS (V)
G
1
60
0.0105
0.0146
62
G
2
R
DS(on) () at VGS = 10 V
DS(on) () at VGS = 4.5 V
R
D (A) per leg e
1
S
I
S
2
N-Channel MOSFET
N-Channel MOSFET
Configuration
Dual
ORDERING INFORMATION
PowerPAK® SO-8L
Package
SQJ764ELP
Lead (Pb)-free and halogen-free
(for detailed order number please see www.vishay.com/doc?79771)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
20
TC = 25 °C a
C = 125 °C
62
Continuous Drain Current e
ID
T
36
62
Continuous Source Current (Diode conduction) e
Pulsed Drain Current b, e
IS
A
IDM
IAS
102
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
24.5
30
L = 0.1 mH
EAS
mJ
W
TC = 25 °C
86
Maximum Power Dissipation b, e
PD
TC = 125 °C
28
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
TJ, Tstg
-55 to +175
260
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
52
UNIT
Junction-to-Ambient
Junction-to-Case (Drain) d
PCB mount c
°C/W
RthJC
1.74
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257).
d. As per on JESD51-14
e. Values based on RthJC and TC of 25 °C. Actual values achievable will be dependent on the thermal characteristics of the complete system.
S24-0302-Rev. A, 13-Mar-2024
Document Number: 62453
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000