Datasheet > SQD07N25-350H

SQD07N25-350H

更新时间： 2024-11-10 14:53:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	188K
描述
Automotive N-Channel 250 V (D-S) 175 °C MOSFET

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SQD07N25-350H 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

SQD07N25-350H 数据手册

SQD07N25-350H

www.vishay.com

Vishay Siliconix

Automotive N-Channel 250 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified ^d

V_DS(V)

250

0.350

R_DS(on)(Ω) at V_GS= 10 V

I_D(A)

Configuration

Package

Single

TO-252

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-252

Drain connected to tab

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

250

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

2.4

Maximum Power Dissipation ^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Case (Drain)

R_thJC

2.1

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

S15-1874-Rev. C, 10-Aug-15

Document Number: 67088

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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