Datasheet > SQD100N02-3m5L

SQD100N02-3m5L

更新时间： 2024-11-28 01:02:55

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive P-Channel 60 V (D-S) 175 Â°C MOSFET

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SQD100N02-3m5L 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

SQD100N02-3m5L 数据手册

SQD19P06-60L

www.vishay.com

Vishay Siliconix

Automotive P-Channel 60 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• TrenchFET^®Power MOSFET

• Package with Low Thermal Resistance

• 100 % R_gand UIS Tested

- 60

0.055

0.100

- 20

R_DS(on)() at V_GS= - 10 V

R_DS(on)() at V_GS= - 4.5 V

I_D(A)

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

• AEC-Q101 Qualified^d

TO-252

Drain Connected to Tab

Top View

P-Channel MOSFET

ORDERING INFORMATION

Package

TO-252

SQD19P06-60L-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

- 60

Gate-Source Voltage

V_GS

- 20

T_C= 25 °C

Continuous Drain Current

I_D

T_C= 125 °C

- 11

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

- 25

I_DM

I_AS

E_AS

- 80

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

- 24

L = 0.1 mH

T_C= 25 °C

Maximum Power Dissipation^b

P_D

_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

3.2

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

S11-2065-Rev. C, 24-Oct-11

Document Number: 65158

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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