Datasheet > SQD100N04-3m6

SQD100N04-3m6

更新时间： 2024-11-08 01:00:31

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威世 - VISHAY		/
页数	文件大小	规格书
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描述
Automotive N-Channel 150 V (D-S) 175 Â°C MOSFET

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SQD100N04-3m6 数据手册

SQD25N15-52

Vishay Siliconix

www.vishay.com

Automotive N-Channel 150 V (D-S) 175 °C MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• Package with low thermal resistance

• 100 % R_gand UIS tested

• AEC-Q101 qualified

V_DS(V)

_DS(on)() at V_GS= 10 V

_D(A)

150

0.052

Configuration

Package

Single

TO-252

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-252

Drain connected to tab

N-Channel MOSFET

Top View

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

150

V_GS

_C= 25 °C

Continuous Drain Current

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction) ^a

Pulsed Drain Current ^b

I_S

I_DM

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

E_AS

T_C= 25 °C

107

Maximum Power Dissipation ^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

-55 to +175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount ^c

°C/W

Junction-to-Case (Drain)

R_thJC

1.4

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR4 material).

S15-2583-Rev. G, 02-Nov-15

Document Number: 68604

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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