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SQD200A40 PDF预览

SQD200A40

更新时间: 2024-11-08 22:06:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
2页 102K
描述
TRANSISTOR MODULE

SQD200A40 数据手册

 浏览型号SQD200A40的Datasheet PDF文件第2页 
TRANSISTOR MODULE  
SQD200A40/60  
UL;E76102M)  
SQD200A is a Darlington power transistor module which a high speed, high power  
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The  
mounting base of the module is electrically isolated from semiconductor elements for  
simple heatsink construction,  
95max  
80±0.25  
23  
23  
4φ5.5  
IC200A, VCEX400/600V  
Low saturation voltage for higher efficiency.  
1
2
3
FE  
High DC current gain h  
B1 X  
Isolated mounting base  
C1  
E1  
C1  
VEBO 10V for faster switching speed.  
M5×10  
110Tab  
Applications)  
Motor ControlVVVF, AC/DC Servo, UPS,  
Switching Power Supply, Ultras onic Application  
C1  
E1  
C1  
E1  
B1  
B1X  
UnitA  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
Unit  
Symbol  
Item  
Conditions  
SQD200A40 SQD200A60  
VCBO  
VCEX  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
400  
400  
600  
600  
V
V
VBE=-2V  
=pw1ms  
10  
V
A
200400)  
200  
Reverse Collector Current  
Base Current  
A
IC  
B
I
12  
A
T
P
Total power dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
1250  
W
V
TC25℃  
j
T
40 to 150  
40 to 125  
2500  
Tstg  
VISO  
A.C.1minute  
M5)  
Recommended Value 1.5  
Recommended Value 1.5  
Typical Value  
-
-
2.515  
2.515  
-
-
25)  
25)  
2.728)  
2.728)  
380  
Mounting  
Torque  
Nm  
(fB)  
TerminalM5)  
Mass  
g
Electrical Characteristics  
Ratings  
Symbol  
Item  
Conditions  
Unit  
Min.  
Max.  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
CB  
CBO  
2.0  
mA  
mA  
V
V  
EB  
V V  
EBO  
800  
SQD200A40  
300  
450  
400  
600  
75  
CEOSUS)  
V
V
V
Ic1A  
SQD200A60  
SQD200A40  
SQD200A60  
Collector Emitter  
Sustaning Voltage  
CEXSUS)  
V
B2  
Ic40AI =-8A  
CE  
Ic200AV 2V  
FE  
h
DC Current Gain  
CE  
100  
Ic200AV 5V  
VCE(sat)  
BE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
On Time  
B
2.0  
2.5  
V
V
Ic200AI 2.7A  
B
V
Ic200AI 2.7A  
ton  
ts  
2.0  
Vcc300VIc200A  
Switching Time  
Storage Time  
Fall Time  
12.0  
3.0  
μs  
B1  
B2  
I 4AI =-4A  
tf  
ECO  
V
Collector-Emitter Reverse Voltage  
1.4  
V
Ic200A  
Transistor part  
Diode part  
0.1  
Thermal Impedance  
(junction to case)  
Rth(j-c)  
/W  
0.3  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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