Datasheet > SQD07N25-350H

SQD07N25-350H

更新时间： 2024-11-07 12:24:19

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
9页	793K
描述
Automotive Dual N-Channel 250 V (D-S) 175 Â°C MOSFET

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SQD07N25-350H 数据手册

SQD07N25-350H

Automotive Dual N-Channel

250 V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V_DS(V)

250

0.350

R_DS(on)() at V_GS= 10 V

FEATURES

I_D(A)

• TrenchFET^®Power MOSFET

• Package with Low Thermal Resistance

• AEC-Q101 Qualified^d

Configuration

Single

TO-252

• 100 % R_gand UIS Tested

• Material categorization:

For definitions of compliance please see

Drain Connected to Tab

N-Channel MOSFET

Top View

ORDERING INFORMATION

Package

TO-252

SQD07N25-350H-GE3

Lead (Pb)-free and Halogen-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

250

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

I_D

_C= 125 °C

Continuous Source Current (Diode Conduction)^a

Pulsed Drain Current^b

I_S

I_DM

I_AS

E_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

2.4

T_C= 25 °C

Maximum Power Dissipation^b

P_D

T_C= 125 °C

Operating Junction and Storage Temperature Range

T_J, T_stg

- 55 to + 175

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

R_thJA

LIMIT

UNIT

Junction-to-Ambient

PCB Mount^c

°C/W

Junction-to-Case (Drain)

R_thJC

2.1

Notes

a. Package limited.

b. Pulse test; pulse width  300 μs, duty cycle  2 %.

c. When mounted on 1" square PCB (FR-4 material).

d. Parametric verification ongoing.

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