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SPA15N60C3XKSA1 PDF预览

SPA15N60C3XKSA1

更新时间: 2024-11-22 21:10:43
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关脉冲晶体管
页数 文件大小 规格书
14页 684K
描述
Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3

SPA15N60C3XKSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:7.84其他特性:AVALANCHE RATED
雪崩能效等级(Eas):460 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (ID):15 A最大漏源导通电阻:0.28 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):45 A
认证状态:Not Qualified表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SPA15N60C3XKSA1 数据手册

 浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第2页浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第3页浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第4页浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第5页浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第6页浏览型号SPA15N60C3XKSA1的Datasheet PDF文件第7页 
SPP15N60C3, SPI15N60C3  
SPA15N60C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
@ T  
650  
0.28  
15  
V
A
DS  
jmax  
R
DS(on)  
I
D
PG-TO220FP  
PG-TO262  
PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
2
1
P-TO220-3-31  
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
PG-TO220  
PG-TO262  
PG-TO220FP SP000216325  
Ordering Code  
Q67040-S4600  
Q67040-S4601  
Marking  
15N60C3  
15N60C3  
15N60C3  
SPP15N60C3  
SPI15N60C3  
SPA15N60C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
15  
9.4  
15  
C
1)  
T = 100 °C  
9.4  
C
Pulsed drain current, t limited by T  
I
D puls  
45  
45  
A
p
jmax  
Avalanche energy, single pulse  
E
460  
460  
mJ  
AS  
I =7.5A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.8  
0.8  
AR  
AR  
jmax  
I =15A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage static  
I
15  
±20  
30  
15  
±20  
30  
A
V
AR  
jmax  
AR  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
156  
34  
W
C
Operating and storage temperature  
Reverse diode dv/dt  
T , T  
dv/dt  
-55...+150  
15  
°C  
V/ns  
j
stg  
6)  
Rev. 3.2  
page 1  
2009-12-22  

SPA15N60C3XKSA1 替代型号

型号 品牌 替代类型 描述 数据表
FCPF260N60E FAIRCHILD

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