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SPA16N50C3 PDF预览

SPA16N50C3

更新时间: 2024-11-21 22:20:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
13页 363K
描述
Cool MOS⑩ Power Transistor

SPA16N50C3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:TO-220AB
包装说明:GREEN, PLASTIC, TO-220FP, 3 PIN针数:3
Reach Compliance Code:compliantFactory Lead Time:1 week
风险等级:5.23其他特性:AVALANCHE RATED
雪崩能效等级(Eas):460 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.28 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):34 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

SPA16N50C3 数据手册

 浏览型号SPA16N50C3的Datasheet PDF文件第2页浏览型号SPA16N50C3的Datasheet PDF文件第3页浏览型号SPA16N50C3的Datasheet PDF文件第4页浏览型号SPA16N50C3的Datasheet PDF文件第5页浏览型号SPA16N50C3的Datasheet PDF文件第6页浏览型号SPA16N50C3的Datasheet PDF文件第7页 
SPP16N50C3, SPB16N50C3  
SPI16N50C3, SPA16N50C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
V
@ T  
560  
0.28  
16  
V
A
DS  
jmax  
R
DS(on)  
I
D
Ultra low gate charge  
P-TO220-3-31 P-TO262  
P-TO263-3-2  
P-TO220-3-1  
Periodic avalanche rated  
Extreme dv/dt rated  
2
3
Ultra low effective capacitances  
Improved transconductance  
2
3
2
1
1
P-TO220-3-31  
P-TO220-3-1  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
SPP16N50C3  
SPB16N50C3  
SPI16N50C3  
SPA16N50C3  
Package  
P-TO220-3-1 Q67040-S4583  
P-TO263-3-2 Q67040-S4642  
P-TO262  
Ordering Code  
Marking  
16N50C3  
16N50C3  
16N50C3  
16N50C3  
Q67040-S4582  
Q67040-S4581  
P-TO220-3-31  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B_I  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
16  
10  
16  
C
1)  
T = 100 °C  
10  
C
Pulsed drain current, t limited by T  
I
D puls  
48  
48  
A
p
jmax  
Avalanche energy, single pulse  
E
460  
460  
mJ  
AS  
I =8, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.64  
0.64  
AR  
AR  
jmax  
I =16A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
16  
±20  
30  
16  
±20  
30  
A
V
AR  
jmax  
AR  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
160  
34  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
Rev. 2.1  
2004-04-07  

SPA16N50C3 替代型号

型号 品牌 替代类型 描述 数据表
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