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SPA17N80C3 PDF预览

SPA17N80C3

更新时间: 2024-11-21 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
13页 334K
描述
Cool MOS⑩ Power Transistor

SPA17N80C3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:0.87
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):670 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):7.4 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.29 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):42 W
最大脉冲漏极电流 (IDM):51 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SPA17N80C3 数据手册

 浏览型号SPA17N80C3的Datasheet PDF文件第2页浏览型号SPA17N80C3的Datasheet PDF文件第3页浏览型号SPA17N80C3的Datasheet PDF文件第4页浏览型号SPA17N80C3的Datasheet PDF文件第5页浏览型号SPA17N80C3的Datasheet PDF文件第6页浏览型号SPA17N80C3的Datasheet PDF文件第7页 
SPP17N80C3, SPB17N80C3  
SPA17N80C3  
Final data  
Cool MOS™ Power Transistor  
V
800  
0.29  
17  
V
A
DS  
Feature  
R
DS(on)  
I
New revolutionary high voltage technology  
Worldwide best R in TO 220  
D
DS(on)  
P-TO220-3-31  
P-TO263-3-2  
P-TO220-3-1  
Ultra low gate charge  
Periodic avalanche rated  
Extreme dv/dt rated  
Ultra low effective capacitances  
Improved transconductance  
3
2
1
P-TO220-3-31  
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
Type  
Package  
Ordering Code  
Marking  
SPP17N80C3  
SPB17N80C3  
SPA17N80C3  
P-TO220-3-1 Q67040-S4353  
P-TO263-3-2 Q67040-S4354  
P-TO220-3-31 Q67040-S4441  
17N80C3  
17N80C3  
17N80C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
SPP_B  
Unit  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
17  
11  
17  
11  
C
1)  
T = 100 °C  
C
Pulsed drain current, t limited by T  
I
D puls  
51  
51  
A
p
jmax  
Avalanche energy, single pulse  
E
670  
670  
mJ  
AS  
I =3.4A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.5  
0.5  
AR  
AR  
jmax  
I =17A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
17  
17  
±20  
±30  
42  
A
V
AR  
jmax  
AR  
V
V
P
±20  
±30  
208  
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2003-07-03  

SPA17N80C3 替代型号

型号 品牌 替代类型 描述 数据表
SPP17N80C3 INFINEON

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Cool MOS⑩ Power Transistor

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