Datasheet > 晶体管 > 功率场效应晶体管> SPA17N80C3XK

SPA17N80C3XK

更新时间： 2024-11-22 12:59:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
13页	334K
描述
Trans MOSFET N-CH 800V 17A 3-Pin(3+Tab) TO-220FP

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中文翻译

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技术参数
数据手册

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SPA17N80C3XK 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.72
Is Samacsys：	N	Base Number Matches：	1

SPA17N80C3XK 数据手册

SPP17N80C3, SPB17N80C3

SPA17N80C3

Final data

Cool MOS™ Power Transistor

800

0.29

Ω

Feature

DS(on)

• New revolutionary high voltage technology

• Worldwide best R in TO 220

DS(on)

P-TO220-3-31

P-TO263-3-2

P-TO220-3-1

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

• Improved transconductance

P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP17N80C3

SPB17N80C3

SPA17N80C3

P-TO220-3-1 Q67040-S4353

P-TO263-3-2 Q67040-S4354

P-TO220-3-31 Q67040-S4441

17N80C3

Maximum Ratings

Parameter

Symbol

Value

SPP_B

Unit

SPA

Continuous drain current

T = 25 °C

T = 100 °C

Pulsed drain current, t limited by T

D puls

jmax

Avalanche energy, single pulse

670

I =3.4A, V =50V

Avalanche energy, repetitive t limited by T

0.5

jmax

I =17A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage

±20

±30

jmax

±20

±30

208

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55...+150

°C

stg

Page 1

2003-07-03

12 3 4 5 6 7...13

中文翻译

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