SPA15N60CFDXK

更新时间： 2024-11-22 13:13:55

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管
页数	文件大小	规格书
12页	338K
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SPA15N60CFDXK 数据手册

SPA15N60CFD

CoolMOS^TMPower Transistor

Product Summary

_DS@ Tjmax

R _DS(on),max

I _D

Features

650

0.330

13.4

Ω

• Intrinsic fast-recovery body diode

• Extremely low reverse recovery charge

• Ultra low gate charge

PG-TO220FP

• Extreme dv /dt rated

• High peak current capability

• Qualified according to JEDEC¹⁾for target applications

CoolMOS CFD designed for:

• Softswitching PWM Stages

• LCD & CRT TV

Type

Package

Marking

SPA15N60CFD

PG-TO220FP

15N60CFD

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

13.4

8.4

Parameter

Symbol Conditions

Unit

Continuous drain current²⁾

I _D

T _C=25 °C

T _C=100 °C

T _C=25 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

I _D=6.7 A, V _DD=50 V

I _D=13.4 A, V _DD=50 V

Avalanche energy, single pulse

460

Avalanche energy, repetitive^3),4)

Avalanche current, repetitive^3),4)

E _AR

I _AR

0.8

13.4

I _D=13.4 A,

Drain source voltage slope

dv /dt

V/ns

_DS=480 V, T _j=125 °C

Reverse diode dv /dt

dv /dt

V/ns

I _S=13.4 A, V _DS=480 V,

T _j=125 °C

600

Maximum diode commutation speed di /dt

A/µs

V _GS

±20

±30

Gate source voltage

static

AC (f >1 Hz)

T _C=25 °C

P _tot

-55 ... 150

Power dissipation

T _j, T _stg

Operating and storage temperature

Mounting torque

°C

M2.5 screws

page 1

Ncm

Rev. 1.0

2007-01-10

12 3 4 5 6 7...12

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