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SPA04N60C2 PDF预览

SPA04N60C2

更新时间: 2024-11-28 22:21:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲局域网
页数 文件大小 规格书
14页 166K
描述
Cool MOS⑩ Power Transistor

SPA04N60C2 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SFM包装说明:PLASTIC, TO-220, FULL PACK-3
针数:3Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):130 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):3.3 A
最大漏极电流 (ID):4.5 A最大漏源导通电阻:0.95 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):31 W
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

SPA04N60C2 数据手册

 浏览型号SPA04N60C2的Datasheet PDF文件第2页浏览型号SPA04N60C2的Datasheet PDF文件第3页浏览型号SPA04N60C2的Datasheet PDF文件第4页浏览型号SPA04N60C2的Datasheet PDF文件第5页浏览型号SPA04N60C2的Datasheet PDF文件第6页浏览型号SPA04N60C2的Datasheet PDF文件第7页 
SPP04N60C2, SPB04N60C2  
SPA04N60C2  
Final data  
Cool MOS™ Power Transistor  
Feature  
Product Summary  
New revolutionary high voltage technology  
Ultra low gate charge  
V
@ T  
jmax  
650  
0.95  
4.5  
V
A
DS  
R
DS(on)  
Periodic avalanche rated  
I
D
Extreme dv/dt rated  
Ultra low effective capacitances  
P-TO220-3-31 P-TO263-3-2  
P-TO220-3-1  
3
2
1
P-TO220-3-31  
Type  
Package  
Ordering Code  
Marking  
SPP04N60C2  
P-TO220-3-1 Q67040-S4304  
04N60C2  
SPB04N60C2  
SPA04N60C2  
P-TO263-3-2 Q67040-S4305  
P-TO220-3-31 Q67040-S4330  
04N60C2  
04N60C2  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPA  
SPP_B  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
4.5  
2.8  
4.5  
C
1)  
T = 100 °C  
2.8  
C
Pulsed drain current, t limited by T  
I
D puls  
9
9
A
p
jmax  
Avalanche energy, single pulse  
E
130  
130  
mJ  
AS  
I =3.6A, V =50V  
D
DD  
2)  
Avalanche energy, repetitive t limited by T  
E
0.4  
0.4  
AR  
jmax  
AR  
I =4.5A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
I
AR  
4.5  
6
4.5  
6
A
AR  
jmax  
Reverse diode dv/dt  
dv/dt  
V/ns  
I = 4.5 A, V < V , di/dt=100A/µs, T =150°C  
jmax  
S
DS  
DD  
Gate source voltage  
V
V
P
±20  
±30  
50  
±20  
±30  
31  
V
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
W
C
Operating and storage temperature  
T , T  
-55...+150  
°C  
j
stg  
Page 1  
2002-08-12  

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