SPA04N60C3

更新时间： 2024-02-23 13:20:42

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管局域网
页数	文件大小	规格书
14页	304K
描述
Cool MOS™ Power Transistor

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中文翻译

获取价格

技术参数
数据手册
替代型号

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SPA04N60C3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	TO-220AB
包装说明：	FLANGE MOUNT, R-PSFM-T3	针数：	3
Reach Compliance Code：	compliant	风险等级：	8.59
Is Samacsys：	N	Base Number Matches：	1

SPA04N60C3 数据手册

SPP04N60C3, SPB04N60C3

SPA04N60C3

Final data

Cool MOS™ Power Transistor

@ T

650

0.95

4.5

Ω

jmax

Feature

DS(on)

• New revolutionary high voltage technology

• Ultra low gate charge

P-TO220-3-31

P-TO263-3-2

P-TO220-3-1

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

• Improved transconductance

P-TO220-3-31

• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

Marking

SPP04N60C3

SPB04N60C3

SPA04N60C3

P-TO220-3-1 Q67040-S4366

P-TO263-3-2 Q67040-S4407

P-TO220-3-31 Q67040-S4413

04N60C3

Maximum Ratings

Parameter

Symbol

Value

SPP_B

Unit

SPA

Continuous drain current

T = 25 °C

4.5

2.8

4.5

2.8

T = 100 °C

Pulsed drain current, t limited by T

Avalanche energy, single pulse

D puls

13.5

130

13.5

130

jmax

I =3.4, V =50V

jmax

Avalanche energy, repetitive t limited by T

0.4

I =4.5A, V =50V

Avalanche current, repetitive t limited by T

Gate source voltage static

4.5

±20

±30

4.5

±20

±30

jmax

tot

Gate source voltage AC (f >1Hz)

Power dissipation, T = 25°C

Operating and storage temperature

T , T

-55...+150

°C

stg

Page 1

2003-10-02

12 3 4 5 6 7...14

中文翻译

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SPA04N60C3 替代型号

型号	品牌	替代类型	描述	数据表
SPA20N60C3	INFINEON	类似代替	Cool MOS™ Power Transistor
SPA11N80C3	INFINEON	类似代替	Cool MOS⑩ Power Transistor
SPA08N80C3	INFINEON	类似代替	Cool MOS⑩ Power Transistor

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