技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
FS10R06VE3
初步数据
PreliminaryꢀData
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极-发射极电压
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
600
ꢀ
ꢀ
ꢀ
V
Collector-emitterꢀvoltage
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 80°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
10
16
A
A
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
20
A
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175
50,0
+/-20
ꢀ W
栅极-发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极-发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,55 2,00
1,70
1,80
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
4,9
5,8
0,10
0,0
0,55
0,017
ꢀ
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 600 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
1,0 mA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 10 A, VCE = 300 V
VGE = ±15 V
RGon = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,012
0,012
0,012
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 10 A, VCE = 300 V
VGE = ±15 V
RGon = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,009
0,013
0,014
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 10 A, VCE = 300 V
VGE = ±15 V
RGoff = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,10
0,12
0,125
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 10 A, VCE = 300 V
VGE = ±15 V
RGoff = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,085
0,13
0,135
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 10 A, VCE = 300 V, LS = 60 nH
VGE = ±15 V
RGon = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,14
0,20
0,22
mJ
mJ
mJ
Eon
Eoff
关断损耗能量ꢀ(每脉冲)
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 10 A, VCE = 300 V, LS = 60 nH
VGE = ±15 V
RGoff = 27 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,24
0,30
0,32
mJ
mJ
mJ
ꢀ
ꢀ
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 360 V
ISC
ꢀ
VCEmax = VCES -LsCE ·di/dt
每个ꢀIGBTꢀ/ꢀperꢀIGBT
每个ꢀIGBTꢀ/ꢀperꢀIGBT
tP ≤ 6 µs, Tvj = 150°C
50
A
结-外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
RthJC
RthCH
Tvj op
ꢀ
ꢀ
2,70 3,00 K/W
外壳-散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
1,00
K/W
°C
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
150
preparedꢀby:ꢀDPK
approvedꢀby:ꢀRK
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.1
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