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SP000100333 PDF预览

SP000100333

更新时间: 2024-11-11 21:12:15
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
7页 645K
描述
Insulated Gate Bipolar Transistor,

SP000100333 技术参数

生命周期:Not RecommendedReach Compliance Code:compliant
风险等级:5.73Base Number Matches:1

SP000100333 数据手册

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技术信息ꢀ/ꢀTechnicalꢀInformation  
IGBT-模块  
IGBT-modules  
FS10R06VE3  
初步数据  
PreliminaryꢀData  
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter  
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues  
集电极-发射极电压  
Tvj = 25°C  
VCES  
600  
V
Collector-emitterꢀvoltage  
连续集电极直流电流  
ContinuousꢀDCꢀcollectorꢀcurrent  
TC = 80°C, Tvj max = 175°C  
TC = 25°C, Tvj max = 175°C  
IC nom  
IC  
10  
16  
A
A
集电极重复峰值电流  
Repetitiveꢀpeakꢀcollectorꢀcurrent  
tP = 1 ms  
ICRM  
Ptot  
20  
A
总功率损耗  
Totalꢀpowerꢀdissipation  
TC = 25°C, Tvj max = 175  
50,0  
+/-20  
W  
栅极-发射极峰值电压  
Gate-emitterꢀpeakꢀvoltage  
VGES  
V
特征值ꢀ/ꢀCharacteristicꢀValues  
min. typ. max.  
集电极-发射极饱和电压  
Collector-emitterꢀsaturationꢀvoltage  
IC = 10 A, VGE = 15 V  
IC = 10 A, VGE = 15 V  
IC = 10 A, VGE = 15 V  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
1,55 2,00  
1,70  
1,80  
V
V
V
VCE sat  
栅极阈值电压  
Gateꢀthresholdꢀvoltage  
IC = 0,30 mA, VCE = VGE, Tvj = 25°C  
VGE = -15 V ... +15 V  
VGEth  
QG  
4,9  
5,8  
0,10  
0,0  
0,55  
0,017  
6,5  
V
µC  
栅极电荷  
Gateꢀcharge  
内部栅极电阻  
Internalꢀgateꢀresistor  
Tvj = 25°C  
RGint  
Cies  
Cres  
ICES  
IGES  
td on  
输入电容  
Inputꢀcapacitance  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V  
VCE = 600 V, VGE = 0 V, Tvj = 25°C  
VCE = 0 V, VGE = 20 V, Tvj = 25°C  
nF  
nF  
反向传输电容  
Reverseꢀtransferꢀcapacitance  
集电极-发射极截止电流  
Collector-emitterꢀcut-offꢀcurrent  
1,0 mA  
栅极-发射极漏电流  
Gate-emitterꢀleakageꢀcurrent  
400 nA  
µs  
开通延迟时间(电感负载)  
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 10 A, VCE = 300 V  
VGE = ±15 V  
RGon = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,012  
0,012  
0,012  
µs  
µs  
上升时间(电感负载)  
Riseꢀtime,ꢀinductiveꢀload  
IC = 10 A, VCE = 300 V  
VGE = ±15 V  
RGon = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,009  
0,013  
0,014  
µs  
µs  
µs  
tr  
td off  
tf  
关断延迟时间(电感负载)  
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload  
IC = 10 A, VCE = 300 V  
VGE = ±15 V  
RGoff = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,10  
0,12  
0,125  
µs  
µs  
µs  
下降时间(电感负载)  
Fallꢀtime,ꢀinductiveꢀload  
IC = 10 A, VCE = 300 V  
VGE = ±15 V  
RGoff = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,085  
0,13  
0,135  
µs  
µs  
µs  
开通损耗能量ꢀ(每脉冲)  
Turn-onꢀenergyꢀlossꢀperꢀpulse  
IC = 10 A, VCE = 300 V, LS = 60 nH  
VGE = ±15 V  
RGon = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,14  
0,20  
0,22  
mJ  
mJ  
mJ  
Eon  
Eoff  
关断损耗能量ꢀ(每脉冲)  
Turn-offꢀenergyꢀlossꢀperꢀpulse  
IC = 10 A, VCE = 300 V, LS = 60 nH  
VGE = ±15 V  
RGoff = 27 Ω  
Tvj = 25°C  
Tvj = 125°C  
Tvj = 150°C  
0,24  
0,30  
0,32  
mJ  
mJ  
mJ  
短路数据  
SCꢀdata  
VGE 15 V, VCC = 360 V  
ISC  
VCEmax = VCES -LsCE ·di/dt  
每个ꢀIGBTꢀ/ꢀperꢀIGBT  
每个ꢀIGBTꢀ/ꢀperꢀIGBT  
tP 6 µs, Tvj = 150°C  
50  
A
结-外壳热阻  
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase  
RthJC  
RthCH  
Tvj op  
2,70 3,00 K/W  
外壳-散热器热阻  
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink  
1,00  
K/W  
°C  
λ
Pasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)  
在开关状态下温度  
Temperatureꢀunderꢀswitchingꢀconditions  
-40  
150  
preparedꢀby:ꢀDPK  
approvedꢀby:ꢀRK  
dateꢀofꢀpublication:ꢀ2013-10-03  
revision:ꢀ2.1  
1

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