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SP000216320 PDF预览

SP000216320

更新时间: 2024-11-11 06:13:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
13页 677K
描述
Cool MOS™ Power Transistor

SP000216320 技术参数

生命周期:Not Recommended包装说明:,
Reach Compliance Code:compliant风险等级:5.74

SP000216320 数据手册

 浏览型号SP000216320的Datasheet PDF文件第2页浏览型号SP000216320的Datasheet PDF文件第3页浏览型号SP000216320的Datasheet PDF文件第4页浏览型号SP000216320的Datasheet PDF文件第5页浏览型号SP000216320的Datasheet PDF文件第6页浏览型号SP000216320的Datasheet PDF文件第7页 
SPP11N80C3  
SPA11N80C3  
Cool MOS™ Power Transistor  
Feature  
New revolutionary high voltage technology  
Ultra low gate charge  
V
800  
0.45  
11  
V
A
DS  
R
DS(on)  
I
D
PG-TO220-3-31 PG-TO220  
Periodic avalanche rated  
Extreme dv/dt rated  
3
Ultra low effective capacitances  
Improved transconductance  
PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)  
2
1
P-TO220-3-31  
Type  
Package  
Ordering Code  
Marking  
SPP11N80C3  
PG-TO220  
Q67040-S4438  
11N80C3  
SPA11N80C3  
PG-TO220-3-31 SP000216320  
11N80C3  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
SPP  
SPA  
Continuous drain current  
I
A
D
1)  
T = 25 °C  
11  
7.1  
11  
C
1)  
T = 100 °C  
7.1  
C
Pulsed drain current, t limited by T  
I
D puls  
33  
33  
A
p
jmax  
Avalanche energy, single pulse  
E
470  
470  
mJ  
AS  
I =2.2A, V =50V  
D
DD  
2)  
E
Avalanche energy, repetitive t limited by T  
0.2  
0.2  
AR  
AR  
jmax  
I =11A, V =50V  
D
DD  
Avalanche current, repetitive t limited by T  
Gate source voltage  
I
11  
±20  
30  
11  
±20  
30  
A
V
AR  
jmax  
AR  
V
V
P
GS  
GS  
tot  
Gate source voltage AC (f >1Hz)  
Power dissipation, T = 25°C  
156  
41  
W
C
Operating and storage temperature  
T
,
T
-55...+150  
°C  
j
stg  
Rev. 2.4  
Page 1  
2005-08-24  

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