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SP0002-19050 PDF预览

SP0002-19050

更新时间: 2024-11-11 03:31:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 155K
描述
OptiMOS㈢ Power-Transistor

SP0002-19050 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.76
Base Number Matches:1

SP0002-19050 数据手册

 浏览型号SP0002-19050的Datasheet PDF文件第2页浏览型号SP0002-19050的Datasheet PDF文件第3页浏览型号SP0002-19050的Datasheet PDF文件第4页浏览型号SP0002-19050的Datasheet PDF文件第5页浏览型号SP0002-19050的Datasheet PDF文件第6页浏览型号SP0002-19050的Datasheet PDF文件第7页 
IPB80N08S2L-07  
IPP80N08S2L-07  
OptiMOS® Power-Transistor  
Product Summary  
Features  
VDS  
75  
6.8  
80  
V
• N-channel Logic Level - Enhancement mode  
R
DS(on),max (SMD version)  
m  
A
• Automotive AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
Green package (lead free)  
• Ultra low Rds(on)  
I D  
PG-TO263-3-2  
PG-TO220-3-1  
• 100% Avalanche tested  
Type  
Package  
Ordering Code Marking  
IPB80N08S2L-07  
IPP80N08S2L-07  
PG-TO263-3-2  
PG-TO220-3-1  
SP0002-19051  
SP0002-19050  
2N08L07  
2N08L07  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current1)  
I D  
T C=25 °C, VGS=10 V  
T C=100 °C,  
80  
80  
A
V
GS=10 V2)  
Pulsed drain current2)  
Avalanche energy, single pulse2)  
Gate source voltage4)  
I D,pulse  
EAS  
T C=25 °C  
I D=80A  
320  
810  
mJ  
V
VGS  
±20  
Ptot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
-55 ... +175  
Rev. 1.0  
page 1  
2006-03-03  

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