Datasheet > 晶体管 > IGBT> SP0002-04966

SP0002-04966

更新时间： 2024-11-11 03:31:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管双极性晶体管
页数	文件大小	规格书
4页	36K
描述
IGBT Chip in Fieldstop -technology

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中文翻译

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技术参数
数据手册

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SP0002-04966 技术参数

生命周期：	Not Recommended	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.65
Is Samacsys：	N	Base Number Matches：	1

SP0002-04966 数据手册

SIGC42T120CQ

IGBT Chip in Fieldstop -technology

FEATURES:

1200V Fieldstop technology 120µm chip

low turn-off losses

short tail current

This chip is used for:

IGBT Modules

positive temperature coefficient

Applications:

welding, SMPS, resonant

applications

Chip Type

V_CE

I_Cn

Die Size

Package

Ordering Code

SIGC42T120CQ 1200V 25A

6.59 x 6.49 mm²

sawn on foil SP0002-04966

MECHANICAL PARAMETER:

mm²

Raster size

6.59 x 6.49

Emitter pad size

Gate pad size

2 x (2.18 x 1.58)

1.06 x 0.65

42.8 / 33.5

120

Area total / active

Thickness

µm

grd

Wafer size

150

Flat position

Max.possible chips per wafer

Passivation frontside

Emitter metallization

332 pcs

Photoimide

3200 nm Al Si Cu

1400 nm Ni Ag –system

Collector metallization

Die bond

suitable for epoxy and soft solder die bonding

electrically conductive glue or solder

Wire bond

Al, <500µm

Reject Ink Dot Size

Æ 0.65mm ; max 1.2mm

store in original container, in dry nitrogen,

< 6 month at an ambient temperature of 23°C

Recommended Storage Environment

Edited by INFINEON Technologies AIM PMD D CID CLS, L7151Q, Rev. 1.1, 20.12.2005

12 3 4

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