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SP0001-01820 PDF预览

SP0001-01820

更新时间: 2024-11-11 20:04:39
品牌 Logo 应用领域
英飞凌 - INFINEON
页数 文件大小 规格书
4页 60K
描述
Insulated Gate Bipolar Transistor

SP0001-01820 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:compliant风险等级:5.73
Base Number Matches:1

SP0001-01820 数据手册

 浏览型号SP0001-01820的Datasheet PDF文件第2页浏览型号SP0001-01820的Datasheet PDF文件第3页浏览型号SP0001-01820的Datasheet PDF文件第4页 
SIGC42T60UN  
High Speed IGBT Chip in NPT-technology  
C
FEATURES:  
This chip is used for:  
SGW50N60HS  
·
·
·
·
·
low Eoff  
600V NPT technology  
100µm chip  
short circuit prove  
positive temperature coefficient  
·
Applications:  
G
·
·
·
Welding  
PFC  
UPS  
E
easy paralleling  
Chip Type  
VCE  
ICn  
50A  
Die Size  
6.5 x 6.5 mm2  
Package  
Ordering Code  
SIGC42T60UN  
600V  
sawn on foil SP0001-01820  
MECHANICAL PARAMETER:  
mm2  
Raster size  
6.5 x 6.5  
Area total / active  
Emitter pad size  
Gate pad size  
42.25 / 35.6  
2x( 3.0x2.85 )  
0.8 x 1.5  
Thickness  
100  
150  
90  
µm  
mm  
deg  
Wafer size  
Flat position  
Max.possible chips per wafer  
Passivation frontside  
Emitter metallization  
334  
Photoimide  
3200 nm Al Si 1%  
1400 nm Ni Ag –system  
suitable for epoxy and soft solder die bonding  
Collector metallization  
Die bond  
electrically conductive glue or solder  
Wire bond  
Al, £500µm  
Reject Ink Dot Size  
Æ 0.65mm ; max 1.2mm  
store in original container, in dry nitrogen,  
< 6 month at an ambient temperature of 23°C  
Recommended Storage Environment  
Edited by INFINEON Technologies AIM PMD D CID CLS, L 7272U, Edition 1, 13.09.2005  

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