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SN74CB3Q3251PWR PDF预览

SN74CB3Q3251PWR

更新时间： 2024-09-15 23:03:11
品牌 Logo 应用领域
德州仪器 - TI 解复用器开关逻辑集成电路光电二极管PC
页数 文件大小 规格书
14页 386K
描述
1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH

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中文翻译

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SN74CB3Q3251PWR 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TSSOP
包装说明：TSSOP-16针数：16
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：6 weeks
风险等级：1.2Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：234276
Samacsys Pin Count：16Samacsys Part Category：Integrated Circuit
Samacsys Package Category：Small Outline PackagesSamacsys Footprint Name：PW (R-PDSO-G16)
Samacsys Released Date：2015-09-23 06:53:16Is Samacsys：N
系列：CB3Q/3VH/3C/2BJESD-30 代码：R-PDSO-G16
JESD-609代码：e4长度：5 mm
逻辑集成电路类型：MULTIPLEXER AND DEMUX/DECODER湿度敏感等级：1
功能数量：1输入次数：1
输出次数：8端子数量：16
最高工作温度：85 °C最低工作温度：-40 °C
输出特性：3-STATE输出极性：TRUE
封装主体材料：PLASTIC/EPOXY封装代码：TSSOP
封装等效代码：TSSOP16,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE, SHRINK PITCH包装方法：TR
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
最大电源电流（ICC）：2 mAProp。Delay @ Nom-Sup：0.12 ns
传播延迟（tpd）：0.18 ns认证状态：Not Qualified
座面最大高度：1.2 mm子类别：Other Logic ICs
最大供电电压 (Vsup)：3.6 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.65 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：4.4 mm
Base Number Matches：1

SN74CB3Q3251PWR 数据手册

 浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第2页浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第3页浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第4页浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第5页浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第6页浏览型号SN74CB3Q3251PWR的Datasheet PDF文件第7页 
SN74CB3Q3251  
1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER  
2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH  
www.ti.com  
SCDS173A–AUGUST 2004–REVISED MARCH 2005  
FEATURES  
•
Data and Control Inputs Provide Undershoot  
Clamp Diodes  
(1)  
•
•
•
High-Bandwidth Data Path (up to 500 MHz  
)
•
•
•
Low Power Consumption (ICC = 1 mA Typ)  
VCC Operating Range From 2.3 V to 3.6 V  
Equivalent to IDTQS3VH251 Device  
5-V Tolerant I/Os With Device Powered Up or  
Powered Down  
Data I/Os Support 0- to 5-V Signaling Levels  
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)  
•
•
Low and Flat ON-State Resistance (ron)  
Characteristics Over Operating Range  
(ron = 4 Ω Typ)  
•
•
•
•
Control Inputs Can Be Driven by TTL or  
5-V/3.3-V CMOS Outputs  
Rail-to-Rail Switching on Data I/O Ports  
– 0- to 5-V Switching With 3.3-V VCC  
– 0- to 3.3-V Switching With 2.5-V VCC  
Ioff Supports Partial-Power-Down Mode  
Operation  
Latch-Up Performance Exceeds 100 mA Per  
JESD 78, Class II  
•
•
Bidirectional Data Flow With Near-Zero  
Propagation Delay  
ESD Performance Tested Per JESD 22  
– 2000-V Human-Body Model (A114-B,  
Class II)  
Low Input/Output Capacitance Minimizes  
Loading and Signal Distortion  
(Cio(OFF) = 3.5 pF Typ)  
– 1000-V Charged-Device Model (C101)  
•
Fast Switching Frequency  
(fOE or fS = 20 MHz Max)  
•
Supports Both Digital and Analog  
Applications: PCI Interface, Differential Signal  
Interface, Memory Interleaving, Bus Isolation,  
Low-Distortion Signal Gating  
(1) For additional information regarding the performance  
characteristics of the CB3Q family, refer to the TI application  
report, CBT-C, CB3T, and CB3Q Signal-Switch Families,  
literature number SCDA008.  
DBQ, DGV, OR PW PACKAGE  
(TOP VIEW)  
RGY PACKAGE  
(TOP VIEW)  
V
B5  
B4  
B3  
1
2
3
4
5
6
7
8
16  
15  
CC  
1
16  
14 B6  
13 B7  
12 B8  
11 S0  
B2  
B1  
A
NC  
OE  
GND  
15  
14  
13  
12  
11  
10  
B3  
B2  
B1  
A
NC  
OE  
2
3
4
5
6
7
B5  
B6  
B7  
B8  
S0  
S1  
10  
9
S1  
S2  
8
9
NC - No internal connection  
NC - No internal connection  
DESCRIPTION/ORDERING INFORMATION  
The SN74CB3Q3251 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of  
the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows  
for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device  
also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.  
Specifically designed to support high-bandwidth applications, the SN74CB3Q3251 provides an optimized  
interface solution ideally suited for broadband communications, networking, and data-intensive computing  
systems.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Copyright © 2004–2005, Texas Instruments Incorporated  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
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中文翻译

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SN74CB3Q3251PWR 替代型号

型号 品牌 替代类型 描述 数据表
SN74CB3Q3251DBQR TI

完全替代

 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH
SN74CB3Q3257PWR TI

类似代替

 4 BIT 1 OF 2 FET MULTIPLEXER/ DEMULTIPLEXER

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SN74CB3Q3251RGYR TI

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 		1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITCH
SN74CB3Q3253 TI

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 		Dual 1-of-4 FET Multiplexer – Demultiplexer
SN74CB3Q3253DBQR TI

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 		DUAL 1 OF 4 FET MULTIPLEXER/ DEMULTIPLEXER
SN74CB3Q3253DGVR TI

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 		DUAL 1 OF 4 FET MULTIPLEXER/ DEMULTIPLEXER
SN74CB3Q3253PW TI

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 		DUAL 1 OF 4 FET MULTIPLEXER/ DEMULTIPLEXER
SN74CB3Q3253PWE4 TI

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 		DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITC
SN74CB3Q3253PWG4 TI

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 		DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER 2.5-V/3.3-V LOW-VOLTAGE HIGH-BANDWIDTH BUS SWITC

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