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SN54BCT2827CW PDF预览

SN54BCT2827CW

更新时间： 2024-09-07 22:35:43
品牌 Logo 应用领域
德州仪器 - TI 驱动器存储输出元件
页数 文件大小 规格书
5页 76K
描述
10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

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中文翻译

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SN54BCT2827CW 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：DFP包装说明：DFP, FL24,.4
针数：24Reach Compliance Code：not_compliant
ECCN代码：3A001.A.2.CHTS代码：8542.39.00.01
风险等级：5.92其他特性：DUAL OUTPUT ENABLE; 25 OHM OUTPUT SERIES RESISTOR
控制类型：ENABLE LOW系列：BCT/FBT
JESD-30 代码：R-GDFP-F24长度：14.36 mm
负载电容（CL）：50 pF逻辑集成电路类型：BUS DRIVER
最大I（ol）：0.012 A位数：10
功能数量：1端口数量：2
端子数量：24最高工作温度：125 °C
最低工作温度：-55 °C输出特性：3-STATE WITH SERIES RESISTOR
输出极性：TRUE封装主体材料：CERAMIC, GLASS-SEALED
封装代码：DFP封装等效代码：FL24,.4
封装形状：RECTANGULAR封装形式：FLATPACK
峰值回流温度（摄氏度）：NOT SPECIFIED电源：5 V
最大电源电流（ICC）：40 mAProp。Delay @ Nom-Sup：8.2 ns
传播延迟（tpd）：8.2 ns认证状态：Not Qualified
座面最大高度：2.29 mm子类别：Bus Driver/Transceivers
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：BICMOS温度等级：MILITARY
端子形式：FLAT端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：9.09 mmBase Number Matches：1

SN54BCT2827CW 数据手册

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SN54BCT2827C, SN74BCT2827C  
10-BIT BUS/MOS MEMORY DRIVERS  
WITH 3-STATE OUTPUTS  
SCBS007E – APRIL 1987 – REVISED NOVEMBER 1993  
SN54BCT2827C . . . JT OR W PACKAGE  
SN74BCT2827C . . . DW OR NT PACKAGE  
(TOP VIEW)  
• BiCMOS Design Substantially Reduces I  
• Output Ports Have Equivalent 25-Ω  
Resistors; No External Resistors Are  
Required  
CCZ  
OE1  
A1  
V
CC  
Y1  
1
24  
23  
• Specifically Designed to Drive MOS DRAMs  
2
A2  
A3  
A4  
3
22 Y2  
21 Y3  
20 Y4  
• 3-State Outputs Drive Bus Lines or Buffer  
4
Memory Address Registers  
5
• Flow-Through Architecture Optimizes  
6
19  
18  
17  
16  
15  
14  
13  
A5  
A6  
A7  
A8  
A9  
A10  
GND  
Y5  
Y6  
Y7  
Y8  
Y9  
Y10  
OE2  
PCB Layout  
7
• Power-Up High-Impedance State  
8
• ESD Protection Exceeds 2000 V Per  
9
MIL-STD-883C, Method 3015  
10  
11  
12  
• Package Options Include Plastic  
Small-Outline (DW) Packages, Ceramic  
Chip Carriers (FK) and Flatpacks (W), and  
Standard Plastic and Ceramic 300-mil DIPs  
(JT, NT)  
SN54BCT2827C . . . FK PACKAGE  
(TOP VIEW)  
description  
These 10-bit buffers and bus drivers are  
specifically designed to drive the capacitive input  
characteristics of MOS DRAMs. They provide  
high-performance bus interface for wide data  
paths or buses carrying parity.  
4
3
2 1 28 27 26  
5
6
7
8
9
25  
24  
23  
22  
21  
20  
19  
A3  
A4  
A5  
NC  
A6  
A7  
A8  
Y3  
Y4  
Y5  
NC  
Y6  
Y7  
Y8  
The 3-state control gate is a 2-input AND gate with  
active-low inputs so if either output-enable (OE1  
or OE2) input is high, all ten outputs are in the  
high-impedance state. The outputs are also in the  
high-impedance state during power-up and  
power-down conditions. The outputs remain in the  
high-impedance state while the device is powered  
down.  
10  
11  
12 13 14 15 16 17 18  
NC-No internal connection  
The SN54BCT2827C is characterized for opera-  
tion over the full military temperature range of  
–55°C to 125°C. The SN74BCT2827C is  
characterized for operation from 0°C to 70°C.  
FUNCTION TABLE  
INPUTS  
OUTPUT  
Y
OE1  
L
OE2  
L
A
L
L
H
Z
Z
L
L
H
X
X
H
X
X
H
Copyright 1993, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
2–1  
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
12345

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