是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | DIP, DIP20,.3 | Reach Compliance Code: | not_compliant |
ECCN代码: | 3A001.A.2.C | HTS代码: | 8542.32.00.41 |
Factory Lead Time: | 1 week | 风险等级: | 5.29 |
最长访问时间: | 45 ns | 其他特性: | AUTOMATIC POWER-DOWN |
I/O 类型: | SEPARATE | JESD-30 代码: | R-CDIP-T20 |
内存密度: | 16384 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 1 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 20 |
字数: | 16384 words | 字数代码: | 16000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 组织: | 16KX1 |
输出特性: | 3-STATE | 可输出: | NO |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP20,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 筛选级别: | 38535Q/M;38534H;883B |
最小待机电流: | 2 V | 子类别: | SRAMs |
最大压摆率: | 0.12 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMJ61CD64-25FG | ROCHESTER |
获取价格 |
Standard SRAM | |
SMJ61CD64-30FG | TI |
获取价格 |
IC,SRAM,64KX1,CMOS,LLCC,CERAMIC | |
SMJ61CD64-30FG | ROCHESTER |
获取价格 |
Standard SRAM | |
SMJ61CD64-30FGM | TI |
获取价格 |
SMJ61CD64-30FGM | |
SMJ61CD64-30JD | ROCHESTER |
获取价格 |
Standard SRAM | |
SMJ61CD64-30JDM | TI |
获取价格 |
SMJ61CD64-30JDM | |
SMJ61CD64-40FG | ROCHESTER |
获取价格 |
Standard SRAM | |
SMJ61CD64-40FGM | TI |
获取价格 |
SMJ61CD64-40FGM | |
SMJ61CD64-40JD | TI |
获取价格 |
IC IC,SRAM,64KX1,CMOS,DIP,22PIN,CERAMIC, Static RAM | |
SMJ61CD64-40JDM | TI |
获取价格 |
SMJ61CD64-40JDM |