是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | DO-214AA |
包装说明: | PLASTIC, SMBJ, 2 PIN | 针数: | 2 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.53 |
最大击穿电压: | 16.5 V | 最小击穿电压: | 13.5 V |
击穿电压标称值: | 15 V | 最大钳位电压: | 22 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e0 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 235 |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1.38 W |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 12.1 V |
子类别: | Transient Suppressors | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 20 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE15E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE15E3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE15-TP-HF | MCC |
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Trans Voltage Suppressor Diode, |
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SMBJP6KE15TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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SMBJP6KE16 | ETC |
获取价格 |
Transient Voltage Suppressor |
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SMBJP6KE160 | ETC |
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Transient Voltage Suppressor |
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SMBJP6KE160A | MCC |
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Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt |
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SMBJP6KE160A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
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SMBJP6KE160AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
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SMBJP6KE160AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO- |
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