是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.25 | 其他特性: | EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED |
最大击穿电压: | 168 V | 最小击穿电压: | 152 V |
击穿电压标称值: | 160 V | 最大钳位电压: | 219 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 600 W | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性: | BIDIRECTIONAL |
最大重复峰值反向电压: | 136 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE160CATR | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJP6KE160C-TP-HF | MCC |
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Trans Voltage Suppressor Diode, | |
SMBJP6KE160CTR | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJP6KE160E3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE160E3TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE160-TP | MCC |
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Trans Voltage Suppressor Diode, | |
SMBJP6KE160-TP-HF | MCC |
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Trans Voltage Suppressor Diode, | |
SMBJP6KE160TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 600W, 130V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE16A | MCC |
获取价格 |
Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt | |
SMBJP6KE16A | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 13.6V V(RWM), Unidirectional, 1 Element, Silicon, DO |