Datasheet > SMBJP6KE15TR

SMBJP6KE15TR

更新时间： 2024-09-09 18:25:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管
页数	文件大小	规格书
4页	560K
描述
Trans Voltage Suppressor Diode, 600W, 12.1V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

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SMBJP6KE15TR 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.57
Is Samacsys：	N	最大击穿电压：	16.5 V
最小击穿电压：	13.5 V	击穿电压标称值：	15 V
最大钳位电压：	22 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e0	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	235	极性：	UNIDIRECTIONAL
最大功率耗散：	1.38 W	认证状态：	Not Qualified
最大重复峰值反向电压：	12.1 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	TIN LEAD	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	20
Base Number Matches：	1

SMBJP6KE15TR 数据手册

SMBJP6KE6.8 thru SMBJP6KE200CA and

SMBGP6KE6.8 thru SMBGP6KE200CA

600 Watt TRANSIENT VOLTAGE

SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This SMBJP6KE and SMBGP6KE series is an economical surface mount

version of the popular P6KE axial-leaded series of 600 W Transient Voltage

Suppressors (TVSs). It is available in both unidirectional and bi-directional

configurations for protecting voltage-sensitive components from destruction

or degradation. Response time of clamping action is virtually instantaneous.

As a result, they may also be used effectively for protection from ESD or EFT

per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments

and induced RF. They can also be used for protecting other sensitive

components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to

NOTE: All SMB series are

equivalent to prior SMS package

identifications.

meet higher and lower power demands and special applications.

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Economical TVS series for surface mount

Available in both unidirectional and bidirectional

(add C or CA suffix to part number for bidirectional)

•

Suppresses transients up to 600 watts @ 10/1000

µs (see Figure 1)

•

Protects sensitive components such as IC’s,

CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

•

Selections for 6.8 to 200 volts breakdown (V_BR

Fast response

Optional 100% screening for avionics grade is

available by adding MA prefix to part number for added

100% temperature cycle -55^oC to +125^oC (10X) as well

as surge (3X) and 24 hours HTRB with post test V_Z&

I_R(in the operating direction for unidirectional or both

directions for bidirectional)

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are

available by adding MQ, MX, MV, or MSP prefixes

respectively to part numbers.

)

•

Compliant to IEC61000-4-2 and IEC61000-4-4 for

ESD and EFT protection respectively

•

Secondary lightning protection per IEC61000-4-5

with 42 Ohms source impedance:

Class 1: SMBJ(G)P6KE6.8 to 130A or CA

Class 2: SMBJ(G)P6KE6.8 to 68A or CA

Class 3: SMBJ(G)P6KE6.8 to 36A or CA

Class 4: SMBJ(G)P6KE6.8 to 18A or CA

•

Secondary lightning protection per IEC61000-4-5

with 12 Ohms source impedance:

•

Axial-lead (thru-hole) equivalents available as P6KE6.8

Class 1: SMBJ(G)P6KE6.8 to 43A or CA

Class 2: SMBJ(G)P6KE6.8 to 22A or CA

to P6KE200CA (consult factory for other options)

Moisture classification is Level 1 with no dry pack

required per IPC/JEDEC J-STD-020B

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

• Peak Pulse Power dissipation at 25^oC: 600 watts at

•

CASE: Void-free transfer molded thermosetting

10/1000 µs (also see Fig 1,2, and 3).

epoxy body meeting UL94V-0

• Impulse repetition rate (duty factor): 0.01%

•

FINISH: Tin-Lead plated over copper and readily

solderable per MIL-STD-750, method 2026

MARKING: Body marked without SMBJ or SMBG

part number prefix, e.g. P6KE6.8A, P6KE36,

P6KE200CA, etc.

• t_clamping(0 volts to V_(BR)min.): < 100 ps theoretical for

unidirectional and < 5 ns for bidirectional

• Operating and Storage temperature: -65^oC to +150^oC

• Thermal resistance: 25 ^ºC/W junction to lead, or 90^ºC/W

junction to ambient when mounted on FR4 PC board

(1oz Cu) with recommended footprint (see last page)

•

POLARITY: Band denotes cathode. Bidirectional

not marked

• Steady-State Power dissipation: 5 watts at T_L= 25^oC,

or 1.38 watts at T_A= 25^ºC when mounted on FR4 PC

board with recommended footprint

WEIGHT: 0.1 grams (approximate)

•

TAPE & REEL option: Standard per EIA-481-1-A

with 12 mm tape, 750 per 7 inch reel or 2500 per

13 inch reel (add “TR” suffix to part number)

• Forward Voltage at 25^oC: 3.5 Volts maximum @ 50

Amp peak impulse of 8.3 ms half-sine wave

(unidirectional only)

•

See package dimensions on last page

• Solder temperatures: 260^oC for 10 s (maximum)

6-16-2004 REV A

Microsemi

Page 1

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

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与SMBJP6KE15TR相关器件

型号	品牌	获取价格	描述	数据表
SMBJP6KE16	ETC	获取价格	Transient Voltage Suppressor
SMBJP6KE160	ETC	获取价格	Transient Voltage Suppressor
SMBJP6KE160A	MCC	获取价格	Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt
SMBJP6KE160A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE160AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE160AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE160AHE3	MCC	获取价格	Tape&Reel: 3Kpcs/Reel;
SMBJP6KE160AP	MCC	获取价格	DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress
SMBJP6KE160AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJP6KE160A-TP	MCC	获取价格	Trans Voltage Suppressor Diode, 600W, 136V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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