是否Rohs认证: | 不符合 | 生命周期: | Active |
零件包装代码: | DO-214AA | 包装说明: | R-PDSO-C2 |
针数: | 2 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
风险等级: | 5.61 | Is Samacsys: | N |
其他特性: | EXCELLENT CLAMPING CAPABILITY, LOW INDUCTANCE, UL RECOGNIZED | 最大击穿电压: | 11.6 V |
最小击穿电压: | 10.5 V | 配置: | SINGLE |
二极管元件材料: | SILICON | 二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE |
JEDEC-95代码: | DO-214AA | JESD-30 代码: | R-PDSO-C2 |
JESD-609代码: | e0 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性: | UNIDIRECTIONAL | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 9.4 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | TIN LEAD |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJP6KE11AE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11AE3TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11AHE3-TP | MCC |
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Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11AP | MCC |
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DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, SMBJ, 2 PIN, Transient Suppress | |
SMBJP6KE11AQ | MCC |
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Tape :3K/Reel, 48K/Ctn; | |
SMBJP6KE11A-TP | MCC |
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Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11A-TP-HF | MCC |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11ATR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO- | |
SMBJP6KE11CA | MCC |
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Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt | |
SMBJP6KE11CA | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 |