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SMBJP6KE11A-TP PDF预览

SMBJP6KE11A-TP

更新时间: 2024-02-14 03:28:22
品牌 Logo 应用领域
美微科 - MCC 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 408K
描述
Trans Voltage Suppressor Diode, 600W, 9.4V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, SMBJ, 2 PIN

SMBJP6KE11A-TP 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DO-214AA
包装说明:PLASTIC, SMBJ, 2 PIN针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.53
最大击穿电压:12.1 V最小击穿电压:9.9 V
击穿电压标称值:11 V最大钳位电压:16.2 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e0
湿度敏感等级:1最大非重复峰值反向功率耗散:600 W
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):235
极性:UNIDIRECTIONAL最大功率耗散:1.38 W
认证状态:Not Qualified最大重复峰值反向电压:8.92 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:TIN LEAD OVER COPPER
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:20Base Number Matches:1

SMBJP6KE11A-TP 数据手册

 浏览型号SMBJP6KE11A-TP的Datasheet PDF文件第2页浏览型号SMBJP6KE11A-TP的Datasheet PDF文件第3页浏览型号SMBJP6KE11A-TP的Datasheet PDF文件第4页浏览型号SMBJP6KE11A-TP的Datasheet PDF文件第5页 
SMBJP6KE6.8(C)A  
THRU  
SMBJP6KE550(C)A  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Transient  
Voltage Suppressor  
6.8 to 550 Volts  
600 Watt  
For surface mount applicationsin in order to optimize board space  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
Compliant. See ordering information)  
Fast response time: typical less than 1.0ps from 0 volts to  
VBR minimum  
Low inductance  
Excellent clamping capability  
UL Recognized File # E331408  
DO-214AA  
(SMBJ) (LEAD FRAME)  
Mechanical Data  
·
·
Epoxy meets UL 94 V-0 flammability rating  
Moisture Sensitivity Level 1  
A
Terminals: solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotespositive end (cathode)  
except Bidirectional  
B
Maximum soldering temperature: 260oC for 10 seconds  
C
Maximum Ratings @ 25oC Unless Otherwise Specified  
F
H
Peak Pulse Current on  
10/1000us waveform  
Peak Pulse Power  
Dissipation  
Peak Forward Surge  
Current  
IPP  
See Table 1 Note: 2  
D
G
PPP  
600W  
100A  
Note: 2,  
E
IFSM)  
Note: 3  
DIMENSIONS  
-55oC to  
+150oC  
Operation And Storage TJ, TSTG  
Temperature Range  
INCHES  
MIN  
MM  
MIN  
4.06  
3.30  
0.15  
0.76  
5.08  
2.00  
1.91  
DIM  
A
MAX  
.185  
.155  
.012  
.060  
.220  
.096  
.087  
.008  
MAX  
4.70  
3.94  
0.31  
1..52  
5.59  
2.44  
2.21  
0.203  
NOTE  
.160  
.130  
.006  
.030  
.200  
.079  
.075  
.002  
B
C
D
NOTES:  
E
1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
F
G
H
0.05  
2. Non-repetitive current pulse, per Fig.3 and derated above  
TA=25oC per Fig.2.  
3. 8.3ms, single half sine wave duty cycle=4 pulses per. Minute  
maximum.  
SUGGESTED SOLDER  
PAD LAYOUT  
0.106"  
0.082”  
0.050”  
www.mccsemi.com  
Revision: A  
2011/01/01  
1 of 5  

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