5秒后页面跳转
SMBJP6KE11E3 PDF预览

SMBJP6KE11E3

更新时间: 2024-11-02 05:24:51
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 560K
描述
Trans Voltage Suppressor Diode, 600W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

SMBJP6KE11E3 数据手册

 浏览型号SMBJP6KE11E3的Datasheet PDF文件第2页浏览型号SMBJP6KE11E3的Datasheet PDF文件第3页浏览型号SMBJP6KE11E3的Datasheet PDF文件第4页 
SMBJP6KE6.8 thru SMBJP6KE200CA and  
SMBGP6KE6.8 thru SMBGP6KE200CA  
600 Watt TRANSIENT VOLTAGE  
SUPPRESSOR  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
This SMBJP6KE and SMBGP6KE series is an economical surface mount  
version of the popular P6KE axial-leaded series of 600 W Transient Voltage  
Suppressors (TVSs). It is available in both unidirectional and bi-directional  
configurations for protecting voltage-sensitive components from destruction  
or degradation. Response time of clamping action is virtually instantaneous.  
As a result, they may also be used effectively for protection from ESD or EFT  
per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments  
and induced RF. They can also be used for protecting other sensitive  
components from secondary lightning effects per IEC61000-4-5 and class  
levels defined herein. Microsemi also offers numerous other TVS products to  
NOTE: All SMB series are  
equivalent to prior SMS package  
identifications.  
meet higher and lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Economical TVS series for surface mount  
Available in both unidirectional and bidirectional  
(add C or CA suffix to part number for bidirectional)  
Suppresses transients up to 600 watts @ 10/1000  
µs (see Figure 1)  
Protects sensitive components such as IC’s,  
CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Selections for 6.8 to 200 volts breakdown (VBR  
Fast response  
Optional 100% screening for avionics grade is  
available by adding MA prefix to part number for added  
100% temperature cycle -55oC to +125oC (10X) as well  
as surge (3X) and 24 hours HTRB with post test VZ &  
IR (in the operating direction for unidirectional or both  
directions for bidirectional)  
Options for screening in accordance with MIL-PRF-  
19500 for JAN, JANTX, JANTXV, and JANS are  
available by adding MQ, MX, MV, or MSP prefixes  
respectively to part numbers.  
)
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively  
Secondary lightning protection per IEC61000-4-5  
with 42 Ohms source impedance:  
Class 1: SMBJ(G)P6KE6.8 to 130A or CA  
Class 2: SMBJ(G)P6KE6.8 to 68A or CA  
Class 3: SMBJ(G)P6KE6.8 to 36A or CA  
Class 4: SMBJ(G)P6KE6.8 to 18A or CA  
Secondary lightning protection per IEC61000-4-5  
with 12 Ohms source impedance:  
Axial-lead (thru-hole) equivalents available as P6KE6.8  
Class 1: SMBJ(G)P6KE6.8 to 43A or CA  
Class 2: SMBJ(G)P6KE6.8 to 22A or CA  
to P6KE200CA (consult factory for other options)  
Moisture classification is Level 1 with no dry pack  
required per IPC/JEDEC J-STD-020B  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Peak Pulse Power dissipation at 25oC: 600 watts at  
CASE: Void-free transfer molded thermosetting  
10/1000 µs (also see Fig 1,2, and 3).  
epoxy body meeting UL94V-0  
Impulse repetition rate (duty factor): 0.01%  
FINISH: Tin-Lead plated over copper and readily  
solderable per MIL-STD-750, method 2026  
MARKING: Body marked without SMBJ or SMBG  
part number prefix, e.g. P6KE6.8A, P6KE36,  
P6KE200CA, etc.  
tclamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65oC to +150oC  
Thermal resistance: 25 ºC/W junction to lead, or 90ºC/W  
junction to ambient when mounted on FR4 PC board  
(1oz Cu) with recommended footprint (see last page)  
POLARITY: Band denotes cathode. Bidirectional  
not marked  
Steady-State Power dissipation: 5 watts at TL = 25oC,  
or 1.38 watts at TA = 25ºC when mounted on FR4 PC  
board with recommended footprint  
WEIGHT: 0.1 grams (approximate)  
TAPE & REEL option: Standard per EIA-481-1-A  
with 12 mm tape, 750 per 7 inch reel or 2500 per  
13 inch reel (add “TR” suffix to part number)  
Forward Voltage at 25oC: 3.5 Volts maximum @ 50  
Amp peak impulse of 8.3 ms half-sine wave  
(unidirectional only)  
See package dimensions on last page  
Solder temperatures: 260oC for 10 s (maximum)  
Copyright 2004  
6-16-2004 REV A  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

与SMBJP6KE11E3相关器件

型号 品牌 获取价格 描述 数据表
SMBJP6KE11E3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMBJP6KE11-TP MCC

获取价格

Trans Voltage Suppressor Diode,
SMBJP6KE11-TP-HF MCC

获取价格

Trans Voltage Suppressor Diode,
SMBJP6KE11TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 8.92V V(RWM), Unidirectional, 1 Element, Silicon, DO
SMBJP6KE12 ETC

获取价格

Transient Voltage Suppressor
SMBJP6KE120 ETC

获取价格

Transient Voltage Suppressor
SMBJP6KE120A MCC

获取价格

Transient Voltage Suppressor 6.8 to 550 Volts 600 Watt
SMBJP6KE120A MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE120AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJP6KE120AE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 600W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-