Datasheet > SMB10J10-E3/52

SMB10J10-E3/52

更新时间： 2024-10-30 06:56:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	105K
描述
Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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替代型号

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SMB10J10-E3/52 数据手册

SMB10(8)J5.0(C) thru SMB10(8)J40(C)A

Vishay General Semiconductor

High Power Density Surface Mount TRANSZORB^®

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

DO-214AA (SMB)

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 40 V

1000 W

800 W

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

_PPM(uni-directional)

P_PPM(bi-directional)

_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band

denotes cathode end, no marking on bi-directional

types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 µs

waveform ⁽¹⁾⁽²⁾(Fig. 1)

uni-directional

bi-directional

1000

800

P_PPM

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

I_PPM

I_FSM

See next table

100

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88422

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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SMB10J10-E3/52 替代型号

型号	品牌	替代类型	描述	数据表
SMB10J10A-E3/52	VISHAY	类似代替	DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB,

与SMB10J10-E3/52相关器件

型号	品牌	获取价格	描述	数据表
SMB10J10HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional,
SMB10J10-HE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 1000W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMB10J11	VISHAY	获取价格	High Power Density Surface Mount TRANSZORB® T
SMB10J11	LGE	获取价格	暂无描述
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SMB10J110A	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMB10J110A/CA	SWST	获取价格	瞬态电压抑制管
SMB10J110CA	LGE	获取价格	暂无描述
SMB10J110CA	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
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