SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A
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Vishay General Semiconductor
®
High Power Density Surface Mount TRANSZORB
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
VBR (uni-directional)
6.4 V to 49.1 V
V
BR (bi-directional)
VWM
6.4 V to 49.1 V
5.0 V to 40 V
1000 W
MECHANICAL DATA
Case: DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
P
PPM (uni-directional)
Base P/N-E3
-
RoHS-compliant, commercial grade
PPPM (bi-directional)
800 W
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
PD
100 W
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
I
FSM (uni-directional only)
100 A
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
TJ max.
150 °C
Polarity
Uni-directional, bi-directional
DO-214AA (SMBJ)
Polarity: For uni-directional types the color band denotes
cathode end, no marking on bi-directional types
Package
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
1000
UNIT
uni-directional
Peak pulse power dissipation
PPPM
W
with a 10/1000 μs waveform (1)(2) (fig. 1)
bi-directional
800
Peak pulse current with a 10/1000 μs waveform (1)
IPPM
PD
See next table
100
A
W
°C
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
Operating junction and storage temperature range
TJ, TSTG
- 55 to 150
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
(2)
Revision: 12-Nov-12
Document Number: 88422
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000