生命周期: | Obsolete | 包装说明: | O-MUPM-D1 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.62 |
应用: | FAST RECOVERY | 外壳连接: | ANODE |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | RECTIFIER DIODE | 最大正向电压 (VF): | 1.75 V |
JESD-30 代码: | O-MUPM-D1 | 最大非重复峰值正向电流: | 1300 A |
元件数量: | 1 | 相数: | 1 |
端子数量: | 1 | 最高工作温度: | 125 °C |
最大输出电流: | 85 A | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | POST/STUD MOUNT |
认证状态: | Not Qualified | 最大重复峰值反向电压: | 1000 V |
最大反向恢复时间: | 0.38 µs | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SM10PHR170 | IXYS |
获取价格 |
Rectifier Diode, 1 Phase, 1 Element, 150A, 1000V V(RRM), Silicon, | |
SM10S | YINT |
获取价格 |
Transient Voltage Suppression Diodes | |
SM10S24A | LEIDITECH |
获取价格 |
Junction passivation optimized design passivated anisotropic rectifier technology | |
SM10S28A | LEIDITECH |
获取价格 |
Junction passivation optimized design passivated anisotropic rectifier technology | |
SM10S30A | LEIDITECH |
获取价格 |
Junction passivation optimized design passivated anisotropic rectifier technology | |
SM10S32A | LEIDITECH |
获取价格 |
Junction passivation optimized design passivated anisotropic rectifier technology | |
SM10S33A | YINT |
获取价格 |
Transient Voltage Suppression Diodes | |
SM10S33A | LEIDITECH |
获取价格 |
8000W Transient 00W Voltage Suppressor | |
SM10S36A | LEIDITECH |
获取价格 |
8000W Transient 00W Voltage Suppressor | |
SM10S36A | YINT |
获取价格 |
Transient Voltage Suppression Diodes |