Datasheet > SM10S30A

SM10S30A

更新时间： 2024-11-26 02:49:23

品牌	Logo	应用领域
雷卯电子 - LEIDITECH		/
页数	文件大小	规格书
5页	2510K
描述
Junction passivation optimized design passivated anisotropic rectifier technology

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SM10S30A 数据手册

SM10S Series 8000W Transient Voltage Suppressor

FEATURES



Junction passivation optimized design passivated anisotropic

rectifier technology



T_J= 175 ℃ capability suitable for high reliability and

automotive requirement.



Available in uni/bi-directional polarity only

Low leakage current

Low forward voltage drop

Cathode

High surge capability

DO-218AB

Meets ISO7637-2 surge specification (varied by test condition)

Meets MSL level 1, per J-STD-020, LF maximum peak of

245℃



AEC-Q101 qualified

Compliant to ROHS Directive 2002/95/EC and in accordance

to WEEE 2002/96/EC

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage transients

induced by inductive load switching and lighting, especially for

automotive load dump protection application.

PRIMARY CHARACTERISTICS

V_R

10 V to 43 V

_PPM（10/1000μs）

8000W

6000W

8.5 W

750A

_PPM（10/10000μs）

MECHANICAL DATA

P_D

Case: DO-218AB

I_FSM

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

T_Jmax

Polarity

Package

175℃

Uni -directional

DO-218AB

MAXIMUM RATINGS (T_C=25ºC, RH=45%-75%, unless otherwise noted)

Parameter

Symbol

P_PPM

P_D

Value

8000

Unit

Peak pulse power dissipation with 10/1000μs waveform

Peak pulse power dissipation with 10/10000μs waveform

Power dissipation on infinite heat Sink at TC=25℃

Peak pulse current with 10/1000μs waveform

Peak forward surge current, 8.3ms single half sine-wave

Operating Junction and Storage Temperature Range

Typical thermal resistance, junction to case

Watts

Amps

℃

6000

8.5

(1)

I_PPM

See next table

750

I_FSM

T_J,T_STG

R_θJC

-55 to +175

0.9

℃/W

Note

^（1^）

Non-repetitive current pulse derated above TA=25℃

Rev:May 8th 2018

www.leiditech.com

1/5

12 3 4 5

中文翻译

下载PDF

与SM10S30A相关器件

型号	品牌	获取价格	描述	数据表
SM10S32A	LEIDITECH	获取价格	Junction passivation optimized design passivated anisotropic rectifier technology
SM10S33A	YINT	获取价格	Transient Voltage Suppression Diodes
SM10S33A	LEIDITECH	获取价格	8000W Transient 00W Voltage Suppressor
SM10S36A	LEIDITECH	获取价格	8000W Transient 00W Voltage Suppressor
SM10S36A	YINT	获取价格	Transient Voltage Suppression Diodes
SM10S40A	LEIDITECH	获取价格	Junction passivation optimized design passivated anisotropic rectifier technology
SM10S43A	LEIDITECH	获取价格	Junction passivation optimized design passivated anisotropic rectifier technology
SM10T-06-12.000M-10C1CC	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1GG	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1LL	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN

与SM10S30A相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

SM10S30A

SM10S30A 数据手册

与SM10S30A相关器件

与SM10S30A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SM10S30A

SM10S30A 数据手册

与SM10S30A相关器件

与SM10S30A相关文章

您还可以找

您在本页遇到什么问题？