5秒后页面跳转
SM10S40A PDF预览

SM10S40A

更新时间: 2024-02-22 19:04:11
品牌 Logo 应用领域
雷卯电子 - LEIDITECH /
页数 文件大小 规格书
5页 2510K
描述
Junction passivation optimized design passivated anisotropic rectifier technology

SM10S40A 数据手册

 浏览型号SM10S40A的Datasheet PDF文件第2页浏览型号SM10S40A的Datasheet PDF文件第3页浏览型号SM10S40A的Datasheet PDF文件第4页浏览型号SM10S40A的Datasheet PDF文件第5页 
SM10S Series 8000W Transient Voltage Suppressor  
FEATURES  
Junction passivation optimized design passivated anisotropic  
rectifier technology  
TJ = 175 capability suitable for high reliability and  
automotive requirement.  
Available in uni/bi-directional polarity only  
Low leakage current  
Low forward voltage drop  
Cathode  
High surge capability  
DO-218AB  
Meets ISO7637-2 surge specification (varied by test condition)  
Meets MSL level 1, per J-STD-020, LF maximum peak of  
245℃  
AEC-Q101 qualified  
Compliant to ROHS Directive 2002/95/EC and in accordance  
to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage transients  
induced by inductive load switching and lighting, especially for  
automotive load dump protection application.  
PRIMARY CHARACTERISTICS  
VR  
10 V to 43 V  
P
PPM10/1000μs)  
8000W  
6000W  
8.5 W  
750A  
P
PPM10/10000μs)  
MECHANICAL DATA  
PD  
Case: DO-218AB  
IFSM  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJmax  
Polarity  
Package  
175  
Uni -directional  
DO-218AB  
MAXIMUM RATINGS (TC=25ºC, RH=45%-75%, unless otherwise noted)  
Parameter  
Symbol  
PPPM  
PD  
Value  
8000  
Unit  
Peak pulse power dissipation with 10/1000μs waveform  
Peak pulse power dissipation with 10/10000μs waveform  
Power dissipation on infinite heat Sink at TC=25  
Peak pulse current with 10/1000μs waveform  
Peak forward surge current, 8.3ms single half sine-wave  
Operating Junction and Storage Temperature Range  
Typical thermal resistance, junction to case  
Watts  
Watts  
Watts  
Amps  
Amps  
6000  
8.5  
(1)  
IPPM  
See next table  
750  
IFSM  
TJ ,TSTG  
RθJC  
-55 to +175  
0.9  
/W  
Note  
1)  
Non-repetitive current pulse derated above TA=25  
Rev:May 8th 2018  
www.leiditech.com  
1/5  

与SM10S40A相关器件

型号 品牌 获取价格 描述 数据表
SM10S43A LEIDITECH

获取价格

Junction passivation optimized design passivated anisotropic rectifier technology
SM10T-06-12.000M-10C1CC PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1GG PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1LL PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10H1JJ PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10H1LK PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10J1CG PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10J1LU PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10K1CG PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10K1LP PLETRONICS

获取价格

Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN