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SM10S36A PDF预览

SM10S36A

更新时间: 2022-02-26 12:09:35
品牌 Logo 应用领域
音特电子 - YINT /
页数 文件大小 规格书
3页 367K
描述
Transient Voltage Suppression Diodes

SM10S36A 数据手册

 浏览型号SM10S36A的Datasheet PDF文件第2页浏览型号SM10S36A的Datasheet PDF文件第3页 
Transient Voltage Suppression Diodes  
Surface Mount – 8000W > SM10S Series  
Trustworthy electronic circuit protection expert  
SM10S Series  
Features  
Mechanical Data  
Optimized glass passivated chip  
TJ = 175 °C capability suitable for high reliability and  
automotive requirement  
Case: DO-218AB  
Epoxy: UL 94V-0 rate flame retardant  
Polarity: Heatsink is anode  
8000 W peak pulse power capability with a 10/1000μs  
waveform, repetitive rate (duty cycle):0.01 %  
Meet ISO 7637-2 5a/5b and ISO 16750 load  
dump test (varied by test condition)  
Low leakage  
Uni-directional polarity  
Low forward voltage drop  
Excellent clamping capability  
Very fast response time  
AEC-Q101 qualified  
DO-218AB  
RoHS compliant  
Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
PPP  
Value  
8000  
Unit  
Watts  
A
Peak power dissipation with a 10/1000μs waveform1  
Peak pulse current wih a 10/1000μs waveform  
Power dissipation on infinite heatsink at TL = 25 °C1  
Peak forward surge current 8.3 ms single half sine-  
Ipp  
See Next Table  
8
PD  
W
IFSM  
A
700  
TJ TSTG  
-55 to +175  
°C  
Operating junction and storage temperature range  
Note  
1.  
Non-repetitive current pulse per Fig.2 and derated above TA= 25 °C per Fig.1  
Electrical Characteristics (TA = 25 °C unless otherwise noted)  
Reverse  
Stand off  
Voltage VR  
(Volts)  
33  
Maximum  
Reverse  
Leakage IR@  
VR(μA)  
Maximum  
Maximum  
Peak Pulse  
Current I pp  
(A)  
Maximum  
Clamping  
Voltage VC  
@ I pp (V)  
55.2  
Breakdown  
Part  
Number  
(Uni)  
Test  
IR @VRWM  
TJ=175  
(uA)  
Voltage VBR (Volts)@IT  
Current  
IT(mA)  
Min .V  
Max .V  
SM10S33A  
SM10S36A  
36.70  
40.00  
40.60  
44.20  
5
5
10  
150  
145.0  
36  
10  
150  
132.5  
60.4  
1
www.yint.com.cn  
Rev:19.3  

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