Datasheet > SM10S33A

SM10S33A

更新时间： 2024-11-26 01:12:43

品牌	Logo	应用领域
音特电子 - YINT		/
页数	文件大小	规格书
3页	367K
描述
Transient Voltage Suppression Diodes

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中文翻译

获取价格

数据手册

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SM10S33A 数据手册

Transient Voltage Suppression Diodes

Surface Mount – 8000W > SM10S Series

Trustworthy electronic circuit protection expert

SM10S Series

Features

Mechanical Data

●Optimized glass passivated chip

●T_J= 175 °C capability suitable for high reliability and

automotive requirement

●Case: DO-218AB

●Epoxy: UL 94V-0 rate flame retardant

●Polarity: Heatsink is anode

● 8000 W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle):0.01 %

●Meet ISO 7637-2 5a/5b and ISO 16750 load

dump test (varied by test condition)

●Low leakage

●Uni-directional polarity

●Low forward voltage drop

●Excellent clamping capability

●Very fast response time

●AEC-Q101 qualified

DO-218AB

●RoHS compliant

Maximum Ratings (TA=25℃ unless otherwise noted)

Parameter

Symbol

P_PP

Value

8000

Unit

Watts

Peak power dissipation with a 10/1000μs waveform¹

Peak pulse current wih a 10/1000μs waveform

Power dissipation on infinite heatsink at TL = 25 °C¹

Peak forward surge current 8.3 ms single half sine-

Ipp

See Next Table

P_D

I_FSM

700

T_JT_STG

-55 to +175

°C

Operating junction and storage temperature range

Note：

Non-repetitive current pulse per Fig.2 and derated above TA= 25 °C per Fig.1

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Reverse

Stand off

Voltage V_R

(Volts)

Maximum

Reverse

Leakage I_R@

V_R(μA)

Maximum

Peak Pulse

Current I pp

(A)

Maximum

Clamping

Voltage V_C

@ I _pp(V)

55.2

Breakdown

Part

Number

(Uni)

Test

I_R@V_RWM

T_J=175

(uA)

Voltage V_BR(Volts)@I_T

Current

I_T(mA)

Min .V

Max .V

SM10S33A

SM10S36A

36.70

40.00

40.60

44.20

150

145.0

150

132.5

60.4

www.yint.com.cn

Rev:19.3

12 3

中文翻译

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与SM10S33A相关器件

型号	品牌	获取价格	描述	数据表
SM10S36A	LEIDITECH	获取价格	8000W Transient 00W Voltage Suppressor
SM10S36A	YINT	获取价格	Transient Voltage Suppression Diodes
SM10S40A	LEIDITECH	获取价格	Junction passivation optimized design passivated anisotropic rectifier technology
SM10S43A	LEIDITECH	获取价格	Junction passivation optimized design passivated anisotropic rectifier technology
SM10T-06-12.000M-10C1CC	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1GG	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10E1LL	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10H1JJ	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10H1LK	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN
SM10T-06-12.000M-10J1CG	PLETRONICS	获取价格	Parallel - Fundamental Quartz Crystal, 12MHz Nom, ROHS COMPLIANT, MINIATURE, SMD, 4 PIN

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