Datasheet > SM10S

SM10S

更新时间： 2024-11-26 01:12:43

品牌	Logo	应用领域
音特电子 - YINT		二极管
页数	文件大小	规格书
3页	367K
描述
Transient Voltage Suppression Diodes

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中文翻译

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SM10S 数据手册

Transient Voltage Suppression Diodes

Surface Mount – 8000W > SM10S Series

Trustworthy electronic circuit protection expert

SM10S Series

Features

Mechanical Data

●Optimized glass passivated chip

●T_J= 175 °C capability suitable for high reliability and

automotive requirement

●Case: DO-218AB

●Epoxy: UL 94V-0 rate flame retardant

●Polarity: Heatsink is anode

● 8000 W peak pulse power capability with a 10/1000μs

waveform, repetitive rate (duty cycle):0.01 %

●Meet ISO 7637-2 5a/5b and ISO 16750 load

dump test (varied by test condition)

●Low leakage

●Uni-directional polarity

●Low forward voltage drop

●Excellent clamping capability

●Very fast response time

●AEC-Q101 qualified

DO-218AB

●RoHS compliant

Maximum Ratings (TA=25℃ unless otherwise noted)

Parameter

Symbol

P_PP

Value

8000

Unit

Watts

Peak power dissipation with a 10/1000μs waveform¹

Peak pulse current wih a 10/1000μs waveform

Power dissipation on infinite heatsink at TL = 25 °C¹

Peak forward surge current 8.3 ms single half sine-

Ipp

See Next Table

P_D

I_FSM

700

T_JT_STG

-55 to +175

°C

Operating junction and storage temperature range

Note：

Non-repetitive current pulse per Fig.2 and derated above TA= 25 °C per Fig.1

Electrical Characteristics (TA = 25 °C unless otherwise noted)

Reverse

Stand off

Voltage V_R

(Volts)

Maximum

Reverse

Leakage I_R@

V_R(μA)

Maximum

Peak Pulse

Current I pp

(A)

Maximum

Clamping

Voltage V_C

@ I _pp(V)

55.2

Breakdown

Part

Number

(Uni)

Test

I_R@V_RWM

T_J=175

(uA)

Voltage V_BR(Volts)@I_T

Current

I_T(mA)

Min .V

Max .V

SM10S33A

SM10S36A

36.70

40.00

40.60

44.20

150

145.0

150

132.5

60.4

www.yint.com.cn

Rev:19.3

12 3

中文翻译

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