Datasheet > SLD50N06T

SLD50N06T

更新时间： 2024-09-18 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1162K
描述
TO-252

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SLD50N06T 数据手册

SLD50N06T

60V N-Channel MOSFET

General Description

Features

- 50A, 60V, R_DS(on)Typ= 12.4mΩ@V_GS= 10 V

R_DS(on)Typ= 15.7mΩ@V_GS= 4.5 V

- Low gate charge ( typical 27.2nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

This Power MOSFET is produced using Msemitek‘s

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD50N06T

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

200

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

P_D

1.69

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 2.3 Apr. 2023

12 3 4 5 6 7 8

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