Datasheet > SLD50P06T

SLD50P06T

更新时间： 2024-09-18 18:09:35

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	997K
描述
TO-252

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中文翻译

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SLD50P06T 数据手册

SLD50P06T

60V P -Channel MOSFET

Features

General Description

- P-Channel:-60V -50A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 25mΩ@VGS = -10 V

R_DS(on)Typ= 27mΩ@VGS = -4.5 V

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- 100% avalanche tested

- Improved dv/dt capability

Application

 PWM Application

 Load Switch

 Power Management

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD50P06T

Units

Drain-Source Voltage

-60

V_DSS

Drain Current

- Continuous (T_C= 25℃)

-50

-31

I_D

- Continuous (T_C= 100℃)

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

-200

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

225

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

2.2

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Maple Semiconductor co., Ltd

http://www.maplesemi.com

Rev1.0 Sep. 2022

12 3 4 5 6 7 8

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