Datasheet > SLD51U-017

SLD51U-017

更新时间： 2024-11-07 22:58:31

品牌	Logo	应用领域
力特 - LITTELFUSE		电视
页数	文件大小	规格书
5页	838K
描述
TVS DIODE 51V 82.4V P600

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中文翻译

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数据手册

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SLD51U-017 数据手册

TVS Diodes

Axial Leaded – 2200W > SLD series

RoHS

Pb e3

SLD Series

Description

Uni-directional

The AEC-Q101 qualiﬁed SLD Series is packaged in a highly

reliable industry standard P600 axial leaded package and

is designed to provide precision overvoltage protection for

sensitive electronics.

Features

Bi-directional

• High reliability application • IEC-61000-4-2 ESD

and automotive grade

AEC-Q101 qualiﬁed withT_J

175°C

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Agency Approvals

Agency

Agency File Number

E230531

• Low incremental surge

resistance

• Glass passivated chip

junction in P600 package

• High temperature

to reﬂow soldering

guaranteed: 260°C/10sec

/ 0.375”, (9.5mm) lead

length, 5 lbs., (2.3kg)

tension

• UL Recognized case

material meeting

ﬂammability rating V-0.

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

• Meets ISO7637 and

ISO16750 load dump

test; 2200W peak pulse

capability at 10μs × 150ms

waveform, repetition rate

(duty cycles): 0.01%

• Fast response time:

typically less than 1.0ps

from 0 Volts to V_BRmin

• Excellent clamping

capability

•Typical failure mode is

short from over-speciﬁed

voltage or current

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Pulse Power Dissipation

10ms x 150msTest Waveform

P_PPM

2200

Peak Pulse Power Dissipation

10μs x 1000μsTest Waveform

P_PPM

P_D

5000

8.0

Steady STLte Power Dissipation on

Inﬁnite Heat Sink atT_L=75ºC (Fig. 6)

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

I_FSM

600

Maximum Instlntlneous Forward Voltlge at

100A for Unidirectional Only

V_F

3.5

Operating Junction and Storage

Temperature Range

T_J, T_STG

R_ƟJL

R_ƟJA

-55 to 175

8.0

°C

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

TypicalThermal Resistlnce Junction to

Lead

°C/W

TypicalThermal Resistlnce Junction to

Ambient

Functional Diagram

Applications

Designed to protect sensitive electronics from:

- Inductive Load Switching

- Alternator Load Dump

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 07/11/19

12 3 4 5

中文翻译

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与SLD51U-017相关器件

型号	品牌	获取价格	描述	数据表
SLD51U-017-B	LITTELFUSE	获取价格	TVS DIODE 51V 82.4V P600
SLD54-018	LITTELFUSE	获取价格	TVS DIODE 54V 87.1V P600
SLD54-018-B	LITTELFUSE	获取价格	TVS DIODE 54V 87.1V P600
SLD5460	MICROSEMI	获取价格	Small Signal Field-Effect Transistor, 2-Element, P-Channel, Silicon, Junction FET, CERAMIC
SLD54A	MCC	获取价格	Tape&Reel : 500Pcs/Reel; Bulk: 200Pcs/Box; Ammo Packing: 450Pcs/AmmoBox;
SLD54CA	MCC	获取价格	Tape&Reel : 500Pcs/Reel; Bulk: 200Pcs/Box; Ammo Packing: 450Pcs/AmmoBox;
SLD54U-017	LITTELFUSE	获取价格	TVS DIODE 54V 87.1V P600
SLD54U-017-B	LITTELFUSE	获取价格	TVS DIODE 54V 87.1V P600
SLD58-018	LITTELFUSE	获取价格	TVS DIODE 58V 93.6V P600
SLD58-018-B	LITTELFUSE	获取价格	TVS DIODE 58V 93.6V P600

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