Datasheet > SLD50L06T

SLD50L06T

更新时间： 2024-11-08 18:09:19

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
12页	1604K
描述
TO-252-4L

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SLD50L06T 数据手册

SLD50L06T

N And P-Channel Enhancement Mode MOSFET

Features

General Description

- N-Channel: 60V 30A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 13.8mΩ@V_GS= 10 V

R_DS(on))Typ= 16.9mΩ@V_GS= 4.5V

- P-Channel: -60V -50A

R_DS(on))Typ= 19.5mΩ@V_GS= -10 V

R_DS(on))Typ= 21.3mΩ@V_GS= -4.5V

- Very Low On-resistance R_DS(ON)

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

 Battery Protection

 Load Switch

 Power Management

N-Channel

P-Channel

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

N-Channel

P-Channel

-60

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

-50

I_D

- Continuous (T_C= 100℃)

-40

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

120

-200

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

360

P_D

R _θJA

T_J, T_STG

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

1.69

1.72

℃/W

℃

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Mar. 2023

12 3 4 5 6 7...12

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