是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DO-204 |
包装说明: | FLANGE MOUNT, R-XUFM-X37 | 针数: | 2 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 240 A |
集电极-发射极最大电压: | 600 V | 配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-XUFM-X37 |
JESD-609代码: | e2 | 元件数量: | 6 |
端子数量: | 37 | 最高工作温度: | 150 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 625 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | Tin/Silver (Sn/Ag) |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 750 ns |
标称接通时间 (ton): | 205 ns | VCEsat-Max: | 2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIM300GD126D | SEMIKRON |
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IGBT Modules | |
SKIM300GD126DL | SEMIKRON |
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Insulated Gate Bipolar Transistor, 270A I(C), 1200V V(BR)CES | |
SKIM301MLI07E4 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 256A I(C), 650V V(BR)CES | |
SKIM301MLI12E4 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 311A I(C), 1200V V(BR)CES | |
SKIM301TMLI12E4B | SEMIKRON |
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Insulated Gate Bipolar Transistor, 311A I(C), 1200V V(BR)CES | |
SKiM304GD12T4D | SEMIKRON |
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IGBT Modules SKiM 4 (123x107x35) | |
SKIM306GD12E4 | SEMIKRON |
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Trench IGBT Modules | |
SKiM306GD12E4 V2 | SEMIKRON |
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IGBT Modules SKIM 63 (160x114x35) | |
SKIM306GD12E4_11 | SEMIKRON |
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Trench IGBT Modules | |
SKIM309GD125SIC | SEMIKRON |
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Insulated Gate Bipolar Transistor |