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SiSS71DN PDF预览

SiSS71DN

更新时间: 2024-10-29 14:54:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 218K
描述
P-Channel 100 V (D-S) MOSFET

SiSS71DN 数据手册

 浏览型号SiSS71DN的Datasheet PDF文件第2页浏览型号SiSS71DN的Datasheet PDF文件第3页浏览型号SiSS71DN的Datasheet PDF文件第4页浏览型号SiSS71DN的Datasheet PDF文件第6页浏览型号SiSS71DN的Datasheet PDF文件第7页浏览型号SiSS71DN的Datasheet PDF文件第8页 
SiSS71DN  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
Axis Title  
30  
24  
18  
12  
6
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
0
10  
0
25  
50  
TC - Case Temperature (°C)  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
TC - Case Temperature (°C)  
2nd line  
Current Derating a  
Power, Junction-to-Case  
Note  
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper  
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the  
package limit.  
S16-1378-Rev. A, 11-Jul-16  
Document Number: 76642  
5
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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