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SiSS71DN PDF预览

SiSS71DN

更新时间: 2024-10-29 14:54:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 218K
描述
P-Channel 100 V (D-S) MOSFET

SiSS71DN 数据手册

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SiSS71DN  
Vishay Siliconix  
www.vishay.com  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
1
Duty cycle = 0.5  
0.2  
Notes:  
0.1  
P
DM  
0.1  
t
0.05  
0.02  
1
t
2
t
t
1
1.Duty cycle, D =  
2
thJA  
2.Per unit base = R  
= 63 °C/W  
(t)  
3.T - T = P  
Z
JM DM thJA  
A
Single pulse  
4.Surface mounted  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Ambient  
1
Duty cycle = 0.5  
0.2  
0.1  
0.05  
0.02  
Single pulse  
0.1  
0.0001  
0.001  
0.01  
0.1  
Square Wave Pulse Duration (s)  
Normalized Thermal Transient Impedance, Junction-to-Case  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see www.vishay.com/ppg?76642.  
S16-1378-Rev. A, 11-Jul-16  
Document Number: 76642  
6
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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